Fujitsu Corporation

Fujitsu Semiconductor Limited

Fujitsu Microelectronics Limited

Tadahiro Okamoto

Eiji Watanabe

Masamitsu Ikumo

Atsushi Kikuchi

Hirohisa Matsuki

Yoshiyuki Yoneda

Masaharu Minamizawa

Kazuyuki Imamura

Nobutaka Shimizu

Nobukatsu Saito

Shuichi Chiba

Yutaka Makino

Hiroyuki Yoda

Masahiko Ishiguri

Takaki Kurita

A multilayer wiring board having a plurality of wiring boards in which wiring layers and resin layers in each wiring board are alternately arranged in a laminated formation. In the multilayer wiring board, all the resin layers and the wiring layers, except a resin layer in the plurality of wiring boards, are separated in a same position between the plurality of wiring boards and the resin layer is continuous in the same position.

Multilayer wiring board and its manufacturing method

A method of manufacturing a semiconductor device using a wiring substrate is provided which can facilitate the handling of the wiring substrate. The method includes the steps of forming a peelable resin layer on a silicon substrate, forming the wiring substrate on the peelable resin layer, mounting semiconductor chips on the wiring substrate, forming semiconductor devices by sealing the plurality of semiconductor chips by a sealing resin, individualizing the semiconductor devices by dicing the semiconductor devices from the sealing resin side but leaving the silicon substrate, peeling each of the individualized semiconductor devices from the silicon substrate between the silicon substrate and the peelable resin layer, and exposing terminals on the wiring substrate by forming openings through the peelable resin layer or by removing the peelable resin layer.

Semiconductor device and manufacturing method thereof

When a nickel (Ni) layer is formed on an electrode pad made of aluminum-silicon (Al&#x2014;Si) by an electroless plating method, prior to the precipitation of zinc (Zn) which becomes a catalyst, copper (Cu) is formed in the form of discontinuous spots or islands on the surface of the electrode pad, thereby providing a copper (Cu) thin layer.

Semiconductor device having an electrode pad, a bump provided above the electrode pad and a bump foundation layer therebetween

A semiconductor device includes a semiconductor substrate and an array of protruding electrodes arranged at a pitch X. Each of the protruding electrodes has a height Xand is formed on a barrier metal base of diameter Xcoupled to an electrode arranged on the semiconductor substrate so as to satisfy the relations (X/2)&#x2266;X(3*X/4) and (X/2)&#x2266;X(3*X/4).

Semiconductor device and method of fabricating the same

A plurality of chips divided from a semiconductor wafer having a plurality of semiconductor integrated circuits formed on a front surface of the wafer, are prepared, front surfaces of the chips being bonded to a first wafer sheet. The back and side surfaces of each chip bonded to the first wafer sheet are covered with a reinforcing thin film. Each of the plurality of chips is removed from the first wafer sheet. The flexural strength of a chip can be suppressed from being lowered by chipping and chip cracks.

Method of manufacturing semiconductor devices by dividing wafer into chips and such semiconductor devices

A method and apparatus for adhering an adhesive-backed tape or sheet to a surface of a semiconductor wafer. The apparatus comprises a housing forming a vacuum working chamber containing a supporting table for the semiconductor wafer and a plurality of rollers for exerting pressure on an adhesive-backed tape or sheet and pressing it against the wafer surface. The rollers comprise rubber rollers having different axial lengths so that, even if the wafer is warped, the tape or sheet can be uniformly adhered to the whole surface of the wafer.

Method and apparatus for adhering a tape or sheet to a semiconductor

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Kawasaki, Japan

Tadahiro Okamoto