Other

Fujikin Inc.

Tokyo Electron Limited

Takasago Netsugaku Kogyo Kabushiki Kaisha

Sharp Kabushiki Kaisha Corporation

Zeon Corporation

Hitachi Plant Engineering Construction Co., Ltd.

Kabushiki Kaisha Ultraclean Technology Research Institute

Canon Kabushiki Kaisha

Yazaki Corporation

Daikin Industries, Ltd.

Shin-etsu Handotai Co., Ltd.

Osaka Sanso Kogyo Ltd.

Mitsui Engineering and Shipbuilding Company Limited

Admap Inc.

Tadahiro Ohmi

Nobukazu Ikeda

Tadashi Shibata

Masaki Hirayama

Shigetoshi Sugawa

Kouji Nishino

Michio Yamaji

Ryousuke Dohi

Takahisa Nitta

Akihiro Morimoto

Tomio Uno

Osamu Nakamura

Yukio Minami

Yasuyuki Shirai

Kazuhiko Sugiyama

Eiji Ideta

Takashi Hirose

Tsutomu Shinohara

Masaru Umeda

Keiji Hirao

Satoshi Kagatsume

Atsushi Matsumoto

Jun Hirose

Masaaki Nagase

Koji Kotani

Tatsushi Yamamoto

Tetsuya Goto

Akinobu Teramoto

Hiroshi Koizumi

Koji Kawada

Hiroyuki Fukuda

Takamitsu Tadera

Hideki Nagaoka

Kouji Kawada

Katunori Komehana

Teruo Honiden

Takeo Yamashita

Masakazu Nakamura

Akira Nakada

Yuji Saito

Kazuhiro Yoshikawa

Hitoshi Inaba

Hiroshi Morokoshi

Ryutaro Nishimura

Masafumi Kitano

Takashi Imaoka

Tatsuo Morimoto

Toyomi Uenoyama

Touru Hirai

Haruyuki Takano

Nobuyoshi Tanaka

Yoshikazu Tanabe

Sadao Kobayashi

Yasuo Kobayashi

Kazuhide Ino

Naoto Sano

Naohisa Goto

Kazuki Kobayashi

Yusuke Hirayama

Osamu Suenaga

Kazuo Fukasawa

Ikuo Sakono

Kosuke Yokoyama

Shigeaki Tanaka

Michiya Kawakami

Masaya Okamoto

Eiji Takahashi

Hiroshi Suzuki

Katsuyuki Sugita

Yasuhiko Kasama

Kazuo Tsubouchi

Hirokazu Suzuki

Akira Nakano

Hirohisa Kikuyama

Toshihide Murakami

Hiroshi Akahori

Kenichi Mitsumori

Hiroyuki Shimada

Tatsuya Sugimoto

Yoshio Ishihara

Tetsuya Kojima

Kazuya Masu

Hiroaki Terada

Kohei Kawamura

Kiyoshi Satoh

Takanori Watanabe

Yoshio Yamazaki

Shigeru Itoi

Takeshi Honma

Toshiro Yamada

Mutsunori Koyomogi

Masayuki Miyashita

Ryosuke Dohi

Yuji Kawano

Noboru Kubota

Toshikuni Shinohara

Junichi Murota

Hideki Yamanaka

Kimiaki Tanaka

The water hammerless opening device comprises an actuator operating type valve installed on the fluid passage, an electro-pneumatic conversion device to supply the 2-step actuator operating pressure Pa to the afore-mentioned actuator operating type valve, a vibration sensor removably fixed to the pipe passage on the upstream side of the actuator operating type valve, and a tuning box to which the vibration detecting signal Pr detected by the vibration sensor is inputted, through which the control signal Sc to control the step operating pressure Ps' of the afore-mentioned 2-step actuator operating pressure Pa is outputted to the electro-pneumatic conversion device, and with which the 2-step actuator operating pressure Pa, of the step operating pressure Ps&#x2032; which makes the vibration detecting signal Pr nearly zero, is outputted from the electro-pneumatic conversion by adjusting the control signal Sc.

Method for water hammerless opening of fluid passage, and method for supplying chemical solutions and device for water hammerless opening for which the method is used

In a microwave plasma processing apparatus, a metal made lattice-like shower plateis provided between a dielectric material shower plate, and a plasma excitation gas mainly an inert gas and a process gas are discharged form different locations. High energy ions can be incident on a surface of the substrateby grounding the lattice-like shower plate. The thickness of each of the dielectric material separation walland the dielectric material at a microwave introducing part is optimized so as to maximize the plasma excitation efficiency, and, at the same time, the distance between the slot antennaand the dielectric material separation walland a thickness of the dielectric material shower plateare optimized so as to be capable of supplying a microwave having a large power.

Plasma processing apparatus

A gas supply facility includes a plurality of pressure type flow controllers connected in parallel, and a first controller to control operation of the plurality of pressure type flow controllers so as to supply a desired gas exhausted by a vacuum pump to a chamber while controlling its flow rate, one of the pressure type flow controllers operates as a second controller to control the gas flow rate range up to 10% of the maximum flow rate supplied to the chamber, while the remaining pressure type flow controllers are made to be ones that control the rest of the gas flow rate range. Furthermore, pressure inside the chamber is controlled by installing a pressure detector in the chamber, inputting the value detected by the detector to the controller, and by adjusting a control signal to the pressure type flow controllers.

Internal pressure controller of chamber and internal pressure subject-to-control type chamber

A semiconductor device includes a Si crystal having a crystal surface in the vicinity of a (111) surface, and an insulation film formed on said crystal surface, at least a part of said insulation film comprising a Si oxide film containing Kr or a Si nitride film containing Ar or Kr.

Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof

A container for precision substrate having one or more component formed by molding a thermoplastic resin, characterized in that the component satisfies characteristics [1] and [2] below. [1] When being brought to contact ultra high purity argon gas (impurity concentration: 1 ppb or less) at 25&#xb0; C. having a flow rate of 1.2 L/min., a water amount in said argon gas after 300 minutes is 30 ppb or less per a surface area 1 cmof the component. [2] When being placed in the air at 100&#xb0; C., an increase amount of organics in the air in 300 minutes is 150 ng or less per weight 1 g of the component. According to the container, demands for low contamination can be satisfied.

Container for precision substrate

The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420&#xb0; C. or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is 3 atomic % or less before the fluoridation carbon film is subjected to the thermal history.

Semiconductor device, method for manufacturing semiconductor device and gas for plasma CVD

An insulating film is formed as a pore-wall protective film () on pore walls in a porous layer () by the use of a mixed gas plasma of a noble gas and an insulating film forming gas generated by microwave excitation. As a result, the pore-wall protective film can have film properties as a protective film.

Method for manufacturing semiconductor device

The present invention provides a vacuum thermal insulating valve that may be used at high temperature in gas supply systems or gas exhaust systems, and also may be made substantially small and compact in size owing to its excellent thermal insulating performance. With a vacuum thermal insulating valve comprising a valve equipped with a valve body and an actuator, and a vacuum thermal insulating box that houses the valve, the afore-mentioned vacuum thermal insulating box S is formed by a square-shaped lower vacuum jacket Shaving a cylinder-shaped vacuum thermal insulating pipe receiving part J on a side and with its upper face made open, and the square-shaped upper vacuum jackets S, which is hermetically fitted to the lower vacuum jacket Sand with its lower face made open.

Vacuum thermal insulating valve

The invention provides an automatic zero point correction device that includes a pressure sensor, wherein output from the sensor is outputted and the sensor output is inputted to a time-varying zero point drift correction means of the sensor; a sensor output judgement means of the time-varying zero point drift correction means, wherein the sensor output judgement means operates to make a judgement determining whether the sensor output is larger than a set value; and operating condition judgement means of the time-varying zero point drift correction means, wherein the operating condition judgement means judges operating conditions of the sensor, wherein the time-varying zero point drift correction means operates to cancel time-varying zero point drift of the sensor when the sensor output judgement means determines sensor output is larger than the set value and the operating condition judgement means determines operating conditions of the sensor are within previously set operating conditions.

Automatic zero point correction device for a pressure sensor, a pressure control device and a pressure type flow rate control device

In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.

P-channel power MIS field effect transistor and switching circuit

In a pattern writing method for writing a pattern on a substrate by the use of projection patterns output from a mirror device including two-dimensionally arranged micromirrors, exposure is implemented by ON/OFF controlling each micromirror and partly overlapping the projection patterns from the mirror device at least in a one-dimensional direction, thereby accurately controlling the exposure of intermediate amounts of light.

Pattern writing system and pattern writing method

A barrier film which has uniform thickness and excellent adhesiveness to the base material and superbly functions to protect a platinum film can be formed on the inner wall surface of a moisture-generating reactor at ease and at a low cost. The moisture-generating reactor in which hydrogen and oxygen are reacted to generate moisture without high temperature combustion is made of an alloy containing aluminum. A principally aluminum oxide (AlO)-composed barrier film is formed by applying an aluminum selective oxidation treatment on the inner wall surface of the moisture-generating reactor, and thereafter a platinum film is stacked on and stuck to the barrier film so that a platinum coating catalyst layer is formed.

Process of forming platinum coating catalyst layer in moisture-generating reactor

A distributor () includes a square waveguide () to be connected to a microwave oscillator () and a square waveguide () having a plurality of openings () formed in a narrow wall (B). The square waveguide () is hollow. A wave delaying member () having a relative dielectric constant &#x2208;is arranged in the square waveguide (). Narrow walls (A,A) of the two square waveguides () are brought into contact with each other, and a communication hole () through which the two waveguides () communicate with each other is formed in the narrow walls (A,A). The widths of the two waveguides () do not become narrow at their connecting portion even if the width of the communication hole () is decreased. Thus, a band of a frequency that can pass through the connecting portion is suppressed from becoming narrow. Consequently, reflection loss that occurs when the frequency of electromagnetic waves to be input to the distributor () changes can be decreased.

Distributor and distributing method, plasma processing system and method, and process for fabricating LCD

A safe, reduced pressure apparatus for generating water vapor from hydrogen and oxygen and feeding high purity moisture to processes such as semiconductor production. The apparatus eliminates the possibility of the gas igniting by maintaining the internal pressure of the catalytic reactor for generating moisture at a high level while supplying moisture gas from the reactor under reduced pressure. A heat dissipation reactor improvement substantially increases moisture generation without being an enlargement in size by efficient cooling of the reactor alumite-treated fins.

Apparatus and reactor for generating and feeding high purity moisture

Growing community of inventors

Sendai-shi, Miyagi, Japan

Tadahiro Ohmi