Other

Alps Electric Co., Ltd.

Fujikin Inc.

Tadahiro Ohmi

Kabushiki Kaisha Ultraclean Technology Research Institute

Takasago Netsugaku Kogyo Kabushiki Kaisha

Sanso Kogyo Kabushiki Kaisha

Tadashi Shibata

Masaru Umeda

Nobukazu Ikeda

Michio Yamaji

Kouji Nishino

Masaki Hirayama

Migaku Takahashi

Kazuhiko Sugiyama

Tsuyoshi Tanikawa

Tomio Uno

Naofumi Yasumoto

Ryosuke Dohi

Hiroyuki Fukuda

Fumio Nakahara

Yasuyuki Yanai

Tsutomu Shinohara

Akihiro Morimoto

Yasuhiko Kasama

Kazuo Tsubouchi

Yasuyuki Shirai

Takahisa Nitta

Koji Kotani

Hitoshi Inaba

Tatsuo Morimoto

Hisayuki Shimada

Ryu Kaiwara

Masahiro Konda

Yuichiro Yamashita

Satoshi Mizokami

Jun Takano

Hirobumi Fukui

Toshiyuki Takewaki

Tuyosi Satoh

Nakahara Fumio

Semiconductor arithmetic circuit

A fluid control valve, which can control a fluid having a pressure in the order of 10 kg/cm , has a response time in the order of several milliseconds can be made small in size, and a fluid supply/exhaust system that provides less gas counter flow in the event of a plurality of valves being used. A fluid control valve of the invention controls a fluid moving in a valve body by closing and opening a portion between a valve seat and a valve holder by use of a drive unit. The drive unit has a rod-shaped shaft for application of pressure through the valve seat and the valve holder, and a member &ldquo;a&rdquo; fixed around the rod-shaped shaft. The member &ldquo;a&rdquo; is made from a magnetic material, and has a space between it and the shaft. A coil provided in parallel to the shaft, moves the shaft via the member &ldquo;a&rdquo; up and down by electromagnetic induction, and makes use of a spring force to close and open a portion between the valve seat and the valve holder.

Fluid control valve and fluid supply/exhaust system

A fluid control valve, which can control a fluid having a pressure in the order of 10 kg/cm,, has a response time in the order of several milliseconds can be made small in size, and a fluid supply/exhaust system that provides less gas counter flow in the event of a plurality of valves being used. A fluid control valve of the invention controls a fluid moving in a valve body by closing and opening a portion between a valve seat and a valve holder by use of a drive unit. The drive unit has a rod-shaped shaft for application of pressure through the valve seat and the valve holder, and a member &ldquo;a&rdquo; fixed around the rod-shaped shaft. The member &ldquo;a&rdquo; is made from a magnetic material, and has a space between it and the shaft. A coil provided in parallel to the shaft, moves the shaft via the member &ldquo;a&rdquo; up and down by electromagnetic induction, and makes use of a spring force to close and open a portion between the valve seat and the valve holder.

A method of readily forming passive oxide film based on chromium oxide characterized by subjecting stainless steel to electrolytic polishing and fluidized abrasive polishing, baking the steel thus treated in an inactive gas to remove moisture from its surface, and heat treating the resultant steel at 300 to 600.degree. C. in a gaseous atmosphere comprising hydrogen or a mixture with an inactive gas and containing less than 4 ppm of oxygen or less than 500 ppb of moisture. An oxidized stainless steel characterized by comprising a stainless steel having a crystal grain number of 6 or above and, formed on the surface thereof, a passive oxide film based on chromium oxide, wherein the oxide film has a thickness of 5 nm or above and the atomic ratio of chromium to iron in the outermost layer of the film is 1 or above.

Method of forming passive oxide film based on chromium oxide, and

Wafer cleaning apparatus and method thereof

A welding method in which the outer-most surfaces of ferritic stainless steel contains chromium oxide surfaces with no iron oxides. The welding method includes flowing a gas having an oxidizing activity over the welded part while applying an arc to the welded part, which is insufficient to melt the welded part. The resulting welded stainless steel is suitable for use as clean room gas supply lines.

Welded members piping system and welding method and clean room

A reduced pressure device the reduced pressure chamber of which is constructed of stainless steel, and includes a passivation film formed on the exposed interior surface thereof. The film has a thickness of more than 50 .ANG. and is composed of two or more layers. One layer contains mainly chrome oxide formed in the vicinity of the interface of the stainless steel and the passivation film. The other layer contains mainly iron oxide formed in the vicinity of the surface of the passivation film. A passivation film may also be used with a thickness of more than 50 .ANG. and containing mainly a mixture of chrome oxide and iron oxide. Lastly a passivation film may also be used with thickness of more than 50 .ANG. and containing mainly chrome oxide.

Method of forming a passivation film

An abrasive composition which can realize chemical-mechanical polishing superior in polishing speed and polishing uniformity. The abrasive composition comprises abrasive grains, isopropyl alcohol, and water. Grain sizes of the abrasive grains are preferably 30 to 250 nm, and the abrasive grains are preferably SiO.sub.2. Further, it is preferable that contents of the abrasive grains and isopropyl alcohol are 5 to 30 wt % and 1 to 15 wt %, respectively. The abrasive composition of the present invention is characterized in that it is deaerated.

Abrasive composition

Semiconductor device with enhanced thermal conductivity

Apparatus for forming low-temperature oxide films and method of forming

A wet station, a wet cleaning method and a wet cleaning apparatus are provided, in which throughput of ultrapure rinse is high, and chemicals and ultrapure water can be regenerated and reused. The wet station is characterized in that a filter made of polytetrafluoroethylene is installed in a ceiling of a wet bench, inside of which wet process apparatuses are provided, and that a spray shower device having a finely-porous nozzle is installed in an upper space between a chemical bath and an ultrapure water rinse bath, both being located inside said wet bench. Furthermore, the wet cleaning method is characterized in that a substrate to which chemicals are attached is cleaned by using ultrapure water or ozonized ultrapure water, and that ultrapure water after said cleaning is collected and made to flow into dedicated piping so that said ultrapure water after said cleaning can be fractionally recovered. Furthermore, the wet cleaning apparatus is characterized in that, for the purpose of fractional recovery of ultrapure water after said cleaning, a collector for collecting ultrapure water and dedicated piping are provided.

Wet station, and method of and apparatus for wet cleaning using said wet

A non-volatile semiconductor memory which is capable of high speed and highly accurate analog data writing. The memory includes a first MOS type transistor having a first floating gate which is electrically isolated. A first electrode is capacitively coupled with the first floating gate. A second electrode is connected via a tunnel junction with the first floating gate. A third electrode is capacitively coupled with the second electrode. A second MOS type transistor interconnects the first and second electrodes. A means is provided for applying a predetermined potential difference between the first and third electrodes to thereby cause a tunnel current to flow in the tunnel junction and to store an electric charge in the first floating gate to thereby cause the second MOS type transistor to conduct when the electric charge has reached a predetermined value.

Non-volatile semiconductor memory device

Semiconductor neural circuit device

Instrument for measuring plasma excited by high-frequency

Growing community of inventors

Aoba-ku, Sendai-shi, Miyagi-ken, Japan

Tadahiro Ohmi