Other

Alps Electric Co., Ltd.

Frontec Incorporated

Tadahiro Ohmi

Kabushiki Kaisha Ultraclean Technology Research Institute

Fujikin Inc.

Stella Chemifa Kabushiki Kaisha

Organo Corporation

Tadashi Shibata

Tokyo Electron Limited

Foundation for Advancement of International Science

Pre-Tech Co., Ltd.

Tadashi Shibata and Tadahiro Ohmi

Fujiken, Inc.

Kabushiki Kaiha Ultraclean Technology Research Institute

Yasuhiko Kasama

Akira Nakano

Takahisa Nitta

Kenichi Mitsumori

Koichi Fukuda

Hirohisa Kikuyama

Masayuki Miyashita

Nobukazu Ikeda

Yasuyuki Shirai

Masayuki Toda

Koji Kotani

Hirofumi Fukui

Chisato Iwasaki

Akira Abe

Tatsuhiro Yabune

Oh Eui Yeol

Masaki Hirayama

Takashi Imaoka

Shoichi Ono

Tomofumi Oba

Osamu Nakamura

Akihiro Morimoto

Makoto Sasaki

Eiji Ideta

Nobuhiro Miki

Hitoshi Seki

Yasuyuki Harada

Haruyuki Takano

Masami Aihara

Tadashi Kumagai

Sung Chul Kim

Tetsutaro Ogushi

Takehisa Konishi

Takayuki Imaoka

Nobuyoshi Tanaka

Koji Yamanaka

Nobumasa Suzuki

Osamu Yoshida

Yusuke Hirayama

Hitoshi Kitagawa

Naofumi Yasumoto

Matagoro Maeno

Ryosuke Dohi

Toshikuni Shinohara

Hiroto Izumi

Koji Nishino

Masakazu Nakamura

Masanori Miyazaki

Satoshi Miyazawa

Hiroshi Ohsawa

Ryu Kaiwara

Toshiyuki Nozawa

Takanobu Kujime

Makoto Imai

Yuichiro Yamashita

Jun Takano

Rita Wai-Chi Au

Ning Mei Yu

Joichi Takada

Man Fujiki

Senri Ojima

Akihiro Nakano

Keng Hoong Wee

Takemi Yonezawa

Masaru Kubota

Akane Sekiya

Toda Masayuki

Tsutomu Nakai

A fixing structure for a welding electrode and a welding head is shown which enable improvement of durability of a welding electrode, improvement of work efficiency in welding, and a reduction of time required for welding and also which make it possible to execute welding for an extended time with high reliability. In the fixing structure, a fixed section of a welding electrode is inserted via a thermally conductive material into an inserting section of a fixing base and a peripheral surface of the fixed section of the welding electrode is uniformly contacted to the fixing base to affix the welding electrode to the fixing base.

Long life welding electrode and its fixing structure, welding head, and welding method

The object of the present invention is to form a chromium-oxide film, excellent in corrosion resistance, without containing an oxide film of other metal onto the metallic material. The chromium-oxide passivation film, excellent in corrosion resistance, without containing the oxide film of other metal can be formed inexpensively and in a short time, and a fluid supplying system for safely supplying fluid with hard corrosivity is able to be provided. One step of forming the passivation film consisting of a chromium oxide layer by giving heat treatment, in an oxidizing atmosphere, after coating chromium on the metallic material having a surface roughness (Ra) not more than 1.5 &#x3bc;m.

Metal material having formed thereon chromium oxide passive film and method for producing the same, and parts contacting with fluid and system for supplying fluid and exhausting gas

A plasma etching device which has an auxiliary electrode enabling realization of a uniform plasma density of generated plasma on the surface of a base and which enables uniform etching with respect to the base without depending upon pressure and without rotating a magnetic field applying means. The plasma etching device has magnetic field applying means which has two parallel plate electrodes I and II and RF power applying means, with the base set on the electrode I, and which is horizontal and unidirectional with respect to the surface of the base where plasma etching is carried out. In this plasma etching device, an auxiliary electrode is provided at least on the upstream side of the base in a flow of electron current generated by the magnetic field applying means. The auxiliary electrode includes a local electrode arranged on the side facing the electrode II and means for adjusting impedance provided at a part of the local electrode to be electrically connected with the electrode I.

Plasma etching device

The wet treatment liquid feed nozzle of the invention comprises an introducing pathhaving an introducing porta discharging pathhaving a discharging porta crossing sectionformed by causing the introducing pathand the discharging pathto cross at the other ends thereof, a nozzle assemblyhaving an opening sectionopening to an object to be treatedprovided at the crossing sectionand pressure control meansfor controlling the difference between the pressure of the wet treatment liquid in contact with the object to be treatedand the atmospheric pressure provided at least on the discharging pathside so that the wet treatment liquid having been in contact with the object to be treatedvia the opening sectiondoes not flow to outside the discharging path

Liquid feed nozzle, wet treatment, apparatus and wet treatment method

The wet treatment liquid feed nozzle of the invention comprises an introducing path having an introducing port, a discharging path having a discharging port, a crossing section formed by causing the introducing path and the discharging path to cross at the other ends thereof, a nozzle assembly having an opening section opening to an object to be treated, provided at the crossing section, and pressure control means, for controlling the difference between the pressure of the wet treatment liquid in contact with the object to be treated and the atmospheric pressure provided at least on the discharging path side so that the wet treatment liquid having been in contact with the object to be treated via the opening section does not flow to outside the discharging path.

Liquid feed nozzle, wet treatment apparatus and wet treatment method

The object of the present invention is to form a chromium-oxide film excellent in corrosion resistance without containing an oxide film of other metal onto the optional metallic material. The chromium-oxide passivation film excellent in corrosion resistance without containing the oxide film of other metal can be formed inexpensively and in a short time, and a fluid supplying system for supplying fluid hard in corrosivity in safety is able to be provided. This invention comprises a step of forming the passivation film consisting of a chromium oxide by giving heat treatment in an oxidizing atmosphere after coating chromium on metallic material of which surface roughness (Ra) of a coat surface is not more than 1.5 &#x3bc;m

A plasma device which is provided with a container, a gas supply system, and an exhaust system. The container is composed of a first dielectric plate made of a material capable of transmitting microwaves. An antenna for radiating microwaves is located on the outside of the container, and an electrode for holding an object to be treated is located inside the container. The microwave radiating surface of the antenna and the surface of the object to be treated with plasma are positioned in parallel and opposite to each other. A wall section of the container other than that constituting the first dielectric plate is composed of a member of a material having electrical conductivity higher than that of aluminum, or the internal surface of the wall section is covered with the member. The thickness (d) of the member is larger that (2/&#x3bc;&#x3c3;), where &#x3c3;, &#x3bc;and &#x3c9; respectively represent the electrical conductivity of the member, the permeability of vacuum and the angular frequency of the microwaves radiated from the antenna.

Plasma method with high input power

A plasma processing apparatus comprising a plurality of plasma processing units is provided. Each of the plasma processing units has a matching circuit connected between a radiofrequency generator and a plasma excitation electrode. Among these plasma processing units, a variation &#x3c;RA&#x3e; between the maximum and minimum values of input-terminal-side AC resistances RA of the matching circuits defined by &#x3c;RA&#x3e;=(RA&#x2212;RA)/(RA+RA) is adjusted to be less than 0.5. A variation between the maximum and minimum values of output-terminal-side AC resistances RB of the matching circuits defined by &#x3c;RB&#x3e;=(RB&#x2212;RB)/(RB+RB) is also adjusted to be less than 0.5. The plasma processing units can be adjusted to achieve substantially uniform plasma results in a shorter period of time.

Plasma processing apparatus including a plurality of plasma processing units having reduced variation

The performance of a plasma processing apparatus which is disassembled, transferred, and reassembled is evaluated. The plasma processing apparatus has a plasma processing chamber having an electrode for exciting a plasma, a radiofrequency generator connected to the electrode, and an impedance matching circuit for performing the impedance matching between the plasma processing chamber and the radiofrequency generator. The performance of the apparatus is evaluated whether or not three times the first series resonant frequency of the plasma processing chamber is larger than the power frequency supplied to the plasma processing chamber.

Performance evaluation method for plasma processing apparatus for continuously maintaining a desired performance level

A plasma processing apparatus includes a radio frequency generator, a plasma processing chamber, a matching circuit for impedance matching between the radio frequency generator and the plasma processing chamber, and matching circuit adjusting means for matching the output impedance of the matching circuit to the impedance of the plasma processing chamber in a nondischarge state. The matching circuit is a product matching circuit that is produced based on a circuit constant of an adjusting matching circuit. The adjusting matching circuit is disposed between the radio frequency generator and the plasma processing chamber for a required plasma treatment and the circuit constant is determined by impedance matching between the radio frequency generator and the plasma processing chamber so that the adjusting matching circuit matches the load impedance of the plasma processing chamber.

Plasma processing apparatus, method for operating the same, designing system of matching circuit, and plasma processing method

A plasma processing apparatus of the present invention includes a matching circuit for impedance matching between a radio-frequency generator and a plasma processing chamber, and one or a plurality of impedance converting circuits provided between the matching circuit and the radio-frequency generator. The impedance converting circuit converts an impedance to decrease a difference in impedance to be matched by the matching circuit, thereby decreasing a change in the output impedance with a moving amount of a capacitance control of one of variable passive elements of the matching circuit, such as a load capacitor and a tuning capacitor. Therefore, a change in the impedance of the plasma processing chamber can be finely controlled.

Plasma processing apparatus

A plasma processing apparatus comprising a plurality of plasma processing units is provided. Each of the plasma processing units has a matching circuit connected between a radiofrequency generator and a plasma excitation electrode. Among these plasma processing units, a variation <RA> between the maximum and minimum values of input-terminal-side AC resistances RA of the matching circuits defined by <RA>&equals;(RA &minus;RA )/(RA &plus;RA ) is adjusted to be less than 0.5. A variation between the maximum and minimum values of output-terminal-side AC resistances RB of the matching circuits defined by <RB>&equals;(RB &minus;RB )/(RB &plus;RB ) is also adjusted to be less than 0.5. The plasma processing units can be adjusted to achieve substantially uniform plasma results in a shorter period of time.

An excimer laser gas in a laser tube is excited by a microwave introduced from awaveguide , and electric field concentration occurs in a slit-shaped gap provided in a plate member , causing plasma discharge. Then the phase of plasma light is regulated and the light is resonated, to cause excimer laser light. This construction realizes plasma excitation entirely uniform along a lengthwise direction of laser light emission, and enables uniform laser light emission with minimum energy loss.

Laser oscillating apparatus, exposure apparatus, and device fabrication method

The present invention provides a micromachining surface treatment material for and a surface treatment method that suppress widening of the diameter of contact holes when removing a natural oxidation layer arising at bottom sections of the contact holes. The micromachining surface treatment material contains less than 0.1% hydrofluoric acid, and more than 40% by weight but less than or equal to 47% by weight of ammonium fluoride. Also, a surfactant is contained therein in an amount from 0.0001 to 0.1% by weight.

Surface treating for micromachining and method for surface treatment

Growing community of inventors

Miyagi-ken, Japan

Tadahiro Ohmi