Sony Corporation

Tadahiro Kono

Akio Machida

Toshio Fujino

Shinsuke Haga

Katsuji Takagi

Yuichi Ishida

Norio Fukasawa

Hidehiro Kawaguchi

Sumito Shiina

An embodiment of the invention provides a laser annealing method, including the steps of radiating a laser beam to an amorphous film on a substrate while scanning the laser beam for the amorphous film, crystallizing the amorphous film, detecting a light quantity of laser beam reflected from the substrate and a scanning speed of the laser beam while the radiation and the scanning of the laser beam are carried out for the amorphous film, and controlling a radiation level and the scanning speed of the laser beam based on results of comparison of the light quantity of laser beam reflected from the substrate, and the scanning speed of the laser beam with respective preset references.

Laser annealing method and laser annealing apparatus

A semiconductor processing apparatus includes: a stage on which a substrate having a semiconductor film to be processed is to be mounted; a supply section that supplies a plurality of energy beams onto the semiconductor film mounted on the stage in such a way that irradiation points of the energy beams are aligned at given intervals; and a control section that moves the plurality of energy beams and the substrate relative to each other in a direction not in parallel to alignment of the irradiation points of the plurality of energy beams supplied by the supply section, and scans the semiconductor film with the irradiation points of the plurality of energy beams in parallel to thereby control a heat treatment on the semiconductor film.

Semiconductor processing apparatus and semiconductor processing method

A thin film semiconductor device is provided. The semiconductor device includes a semiconductor thin film configured to have an active region turned into a polycrystalline region through irradiation with an energy beam, and a gate electrode configured to be provided to traverse the active region. Successive crystal grain boundaries extend along the gate electrode in a channel part that is the active region overlapping with the gate electrode, and the crystal grain boundaries traverse the channel part and are provided cyclically in a channel length direction.

Thin film semiconductor device having crystal grain boundaries cyclically traversing a channel part and method for manufacturing same

A plasma display panel is provided. The plasma display panel includes a front panel including a front glass substrate, a plurality of pairs of discharge-maintaining electrodes disposed over the front glass substrate, and a first dielectric layer disposed in covering relation to the pairs of discharge-maintaining electrodes, and a rear panel disposed in confronting relation to the front panel with discharge spaces interposed therebetween, the front panel including a second dielectric layer disposed between the front glass substrate and the pairs of discharge-maintaining electrodes, the second dielectric layer including a cluster of fine particles of silica.

Plasma display panel

A method for crystallizing a semiconductor thin film is provided. The method includes continuously irradiating an energy beam on a semiconductor thin film while scanning at a given speed. The energy beam is scanned in parallel lines while keeping pitches of not larger than an irradiation radius of the energy beam to grow band-shaped crystal grains in a direction different from a scanning direction of the energy beam.

Method for crystallizing a semiconductor thin film

A method for manufacturing thin film semiconductor device is provided. The semiconductor thin film includes a semiconductor thin film and a gate electrode and has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part.

Method for manufacturing thin film semiconductor

A display including a driving substrate is provided. Arrayed on the driving substrate is a plurality of pixel electrodes and thin film transistors for driving the pixel electrodes. Each thin film transistor includes a semiconductor thin film having an active region made to be polycrystalline by irradiation with an energy beam, and a gate electrode provided so as to cross the active region. In a channel part of the active region overlapping with the gate electrode, the crystal state is varied periodically along the channel length direction, and substantially the same crystal state crosses the channel part.

Display device including thin film transistors

A thin film semiconductor device is provided that includes a semiconductor thin film and a gate electrode. The semiconductor thin film has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part.

Growing community of inventors

Tokyo, Japan

Tadahiro Kono