Hitachi Chemical Company, Ltd.

Hitachi, Ltd.

Hitachi Engineering Services Co., Ltd.

Other

Tadahiro Kimura

Tomohiro Iwano

Daisuke Ryuzaki

Takenori Narita

Hirotaka Akimoto

Akira Mizuochi

Tetsu Oomori

Isao Nemezawa

Tatemi Ido

Masato Fukasawa

Yousuke Hoshi

Shigeru Nobe

Kazuhiro Enomoto

Tooru Takahashi

Munehiro Oota

Kanshi Chinone

Eiichi Satou

Masanobu Habiro

Takamitsu Nagara

The slurry of the invention comprises abrasive grains and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass %. The polishing liquid of the invention comprises abrasive grains, an additive and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass %.

Slurry, polishing fluid set, polishing fluid, and substrate polishing method using same

A slurry includes abrasive grains and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass %. A polishing liquid includes abrasive grains, an additive and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass %.

The polishing solution for CMP according to the invention comprises abrasive grains, an additive and water, and the polishing solution comprises an organic compound satisfying specified conditions as the additive. The polishing method of the invention is for polishing of a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.

Polishing solution for CMP and polishing method using the polishing solution

Disclosed is a polishing slurry for CMP which makes it possible to polish a barrier layer, a wiring metal layer and an interlayer dielectric continuously, and restrain a phenomenon that the interlayer dielectric in a region near the wiring metal layer is excessively shaven off so that a depression is generated. A polishing slurry, for CMP, containing abrasive particles, an acid, a tolyltriazole compound represented by the following general formula (I), and water: wherein Rs each independently represent an alkylene group having 1 to 4 carbon atoms, and Rrepresents an alkylene group having 1 to 4 carbon atoms.

Polishing slurry for CMP, and polishing method

A polymeric optical waveguide substrate includes a first region provided thereon with a polymer optical waveguide and an optical waveguide-free second region, the first and second regions being on the same substrate, wherein an adhesive layer is between the lowermost polymer layer constituting the optical waveguide in the first region and the substrate, and wherein a groove intrudes into the substrate at the boundary between the first and second regions. A method for preparing the waveguide substrate includes the steps of applying an adhesive layer onto the first region while the second region is free of any adhesive layer; applying a polymer onto the whole surface of the substrate to give a polymer layer for forming an optical waveguide following the formation of the adhesive layer; cutting the polymer layer at the boundary between the first and second regions; and peeling off or removing the polymer on the second region.

Optical waveguide and method for preparing the same

In a radiation shield in which a bag having flexibility is filled with a shielding liquid, a side of the bag is integrally equipped with reinforcement members which have a higher strength than the material of the bag and are longitudinally disposed and spaced horizontally. The bag filled with the shielding liquid is restrained from being deformed (swollen in its lower portion) by the reinforcement members having a higher strength than the material of the bag, so that the radiation shield is maintained in a predetermined thickness and exhibits predetermined performance.

Radiation shield

A radiation shielding body unit comprises a bag, a reinforcing wall connecting between inner wall surfaces of the bag opposite to each other, a liquid supply/discharge port for radiation shielding liquid, provided in the bag, and a hole portion provided in the bag for engagement with a connection device used when the bag is supported by suspension. And a radiation shielding body comprises a frame and a plurality of the above-mentioned radiation shielding body units, each of the radiation shielding body units is suspendedly supported by the frame through a connecting device engaged with the hole portion of each of the radiation shielding body units.

Radiation shielding body

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Hitachi, Japan

Tadahiro Kimura