Mitsubishi Chemical Corporation

Tadahiro Katsumoto

Kenji Shimoyama

Yutaka Mori

Kentarou Horibe

Yukihiro Miyamoto

Yukinari Haraguchi

Yuki Haruta

Harumi Asami

Takeshi Otsu

Minoru Soma

Provided is a sintered phosphor-composite for an LED, having high heat resistance, high thermal conductivity, high luminance, and high conversion efficacy. In addition, there are provided: a light-emitting apparatus which uses the sintered phosphor-composite; and an illumination apparatus and a vehicular headlamp which use the light-emitting apparatus. The sintered phosphor-composite includes a nitride phosphor and a fluoride inorganic binder. The sintered phosphor-composite preferably has an internal quantum efficiency of 60% or more when excited by blue light having a wavelength of 450 nm. Further, the sintered phosphor-composite preferably has a transmittance of 20% or more at a wavelength of 700 nm.

Sintered phosphor, light emitting device, illumination device, vehicle headlamp, and method for manufacturing sintered phosphor

A nitride LED having improved light extraction efficiency and/or axial luminous intensity is provided. The nitride LED contains a nitride semiconductor substrate having, on a front face thereof, a light-emitting structure made of a nitride semiconductor, wherein a roughened region is provided on a back face of the substrate, the roughened region has a plurality of protrusions, each of the plurality of protrusions has a top point or top plane and has a horizontal cross-section which is circular, except in areas where the protrusion is tangent to other neighboring protrusions, and which has a surface area that decreases on approaching the top point or top plane, the plurality of protrusions are arranged such that any one protrusion is in contact with six other protrusions, and light generated in the light-emitting structure is output to the exterior through the roughened region.

Nitride light-emitting diode element and method of manufacturing same

An object of the present invention is to provide a package from which a metal wiring and the like are difficult to be detached even when heat is generated from a semiconductor light-emitting element. This object is achieved with a package for a semiconductor light-emitting device comprising at least a molded resin containing (A) a SiH-containing polyorganosiloxane and (B) a filler, wherein an amount of SiH existing in the molded resin, after a heat treatment thereof at 200&#xb0; C. for 10 minutes, is 20 to 65 &#x3bc;mol/g.

Package for semiconductor light-emitting device and light-emitting device

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Yokohama, Japan

Tadahiro Katsumoto