Canon Kabushiki Kaisha

Tadahiko Hirai

Takayuki Sumida

Jun Sumioka

Kaoru Okamoto

Naoki Nishimura

Yoshinobu Sekiguchi

Tetsushi Yamamoto

Kikuzo Sawada

Shunji Imanaga

An active matrix organic electroluminescence(EL) display comprises plural selection and data lines mutually crossed, and a pixel circuit connected to the selection and data lines and having switching devices, a storage capacitor and an organic EL device. In a part of a period that the pixel circuit connected to the selection line is being selected, an applied first data signal is held as a voltage at the storage capacitor of the selected pixel circuit. After the selection signal applying, a first current according to the held voltage is supplied to the organic EL device, and this emits light at luminance according to the first current. In another part of the period, a second current according to an applied second data signal is supplied to the organic EL device of the selected pixel circuit, and this emits light at luminance according to the second current.

Active matrix organic electroluminescence display and its gradation control method

A display apparatus includes a plurality of pixels disposed in a matrix pattern, each of the pixels emitting light, an acquisition unit for acquiring degradation characteristics of an emission luminance of each pixel from a video signal or a signal output from the pixel, and a detection unit for detecting a boundary of pixels showing different degradation characteristics of the plurality of pixels based on the degradation characteristics acquired by the acquisition unit. A calculation unit calculates a correction amount of the video signal to the pixels in a periphery of the boundary such that the emission luminance is gently varied in the periphery of the boundary when the plurality of pixels in the periphery of the boundary detected by the detection unit are caused to emit light with a same video signal. In addition, a correction unit corrects the video signal based on the calculated correction amount, and a video image is displayed by the plurality of pixels based on the corrected video signal.

Display apparatus and driving method thereof

An active-matrix display includes a data line, at least one select line, a control unit supplying a voltage signal and a current signal to the data line, and a pixel circuit receiving the voltage signal and the current signal from the data line to drive a light emitting element, the control unit including a voltage or first current source supplying a voltage or current pulse to the data line in order to make the voltage holding unit hold the voltage signal for making the light emitting element emit light having predetermined brightness in a first selection period in which the first switch is closed, a second current source supplying the current signal for making the light emitting element emit light having the predetermined brightness to the data line in a second selection period in which the first switch and the second switch are closed, a detection circuit detecting potential held in the voltage holding unit in the second selection period, and a correction unit correcting the voltage signal based on a relationship between the current signal and the detected potential.

Active-matrix display and drive method thereof

A display apparatus includes a scanning line, a signal line, and a pixel circuit. The pixel circuit is selected according to a signal applied to the scanning line, and a signal is input to the selected pixel circuit from the signal line. The pixel circuit include a holding capacitor, a first switch which opens and closes connection between one terminal of the light emitting element and the signal line in accordance with a signal applied to the scanning line, and a second switch which opens and closes connection between one terminal of the holding capacitor and the signal line in accordance with a signal applied to the scanning line. First and a second voltage supplies are switchably connected to the signal line, and during a period when the pixel circuit is selected, the first voltage supply is connected to the signal line and the first switch is closed so that a voltage of the first voltage supply is applied to a terminal of the light emitting element, and the second voltage supply is connected to the signal line and the second switch is closed and the first switch is opened, so that a voltage of the second voltage supply is applied to one terminal of the holding capacitor. A voltage of the first voltage supply is determined based on a terminal-to-terminal voltage of the light emitting element when a voltage of the second voltage supply is applied to the holding capacitor and current flows in the light emitting element.

Display apparatus and driving method of display apparatus

A temperature-history sensor includes a resonance circuit composed of at least a capacitor and a coil. The temperature-history sensor has a display for indicating a predetermined set temperature of the temperature-history sensor. The capacitor has at least a thermofusion material between electrodes of the capacitor, and the melting point of the thermofusion material is in the region of the set temperature.

Resonance tag with temperature sensor

The present invention provides an RF tag which does not have an integrated circuit such as a silicon chip, can retain a plurality of information, can rewrite or add the information, and is inexpensive. The RF tag includes an RF resonance circuit which has at least two capacitors connected in series or parallel and at least one coil antenna formed on a substrate, wherein at least one of the capacitors is an anti-fuse which irreversibly short-circuits when a voltage higher than a threshold voltage is applied to the anti-fuse, and the surface of an electrode constituting the capacitor has a mean roughness of 1 &#x3bc;m or less.

Radio frequency tag

A light emitting element circuit includes a current minor circuit having two thin film transistors, two current input terminals, and two output terminals, a capacitor for holding voltage in accordance with an electric current to be input from one of the two current input terminals, and a light emitting element connected to the current minor circuit. An electric current is supplied to the light emitting element through the current mirror circuit in accordance with the voltage held in the capacitor. The two output terminals of the current mirror circuit are connected to the light emitting element, and the two current input terminals of the current minor circuit are connected with each other through a switch in a time period other than a time period during which an electric current is input from the one of the two current input terminals. In addition, a switching circuit connects the current minor circuit to a matrix wiring, and the current minor circuit includes a switch to connect one of the two output terminals of the current minor circuit to a ground.

Light emitting element circuit and drive method thereof

A sensor includes a first gate electrode, a second gate electrode, a semiconductor layer, a gate-insulating layer, a source electrode, a drain electrode, and a sensing portion including an accommodating part and a receiving layer. The first and second gate electrodes are opposed to each other with the sensing portion, the semiconductor layer, and the gate-insulating layer therebetween. One surface of the semiconductor layer is in contact with a surface of the sensing portion, and another surface of the semiconductor layer is in contact with the gate-insulating layer. A surface of the gate-insulating layer is in contact with the second gate electrode. The first gate electrode and the receiving layer are opposed to each other with the accommodating part therebetween. The source and drain electrodes are in contact with the semiconductor layer.

Dual-gate sensor

In a resonance tag provided with a resonance circuit composed of a capacitive element and an inductive element, the capacitive element is characterized by having a condition under which the capacitance of the capacitive element is reversibly changed by a voltage applied to the resonance circuit and anther condition under which the capacitance of the capacitive element is irreversibly changed by another voltage applied to the resonance circuit.

Resonance tag, method of reversibly changing resonance characteristics of resonance circuit, and capacitive element

Provided is a nonvolatile memory device including: a storage element; a switching element electrically connected to the storage element; and a plurality of lead wirings electrically connected to the switching element, all of which are arranged on a substrate having an insulating surface, wherein the switching element includes an organic semiconductor, and the storage element contains a dielectric material and stores information by selecting at least two states including a high impedance state and a low impedance state.

Nonvolatile memory device

One main electrode of a TFT is connected with one terminal of a two-terminal type nonvolatile memory element, a gate electrode of the TFT is connected with a word line, and the other main electrode thereof is connected with a bit line. The other terminal of the memory element is connected with a base line. A fixed resistor is connected between a connecting point between the other main electrode of the TFT and the bit line and an input terminal of the bit line. In information writing for changing the memory element whose initial state is a low impedance state to a high impedance state, voltages having polarities reverse relative to a reference voltage are applied to the input terminal of the bit line and an input terminal of the base line, respectively, so that a high voltage necessary to change the state is applied between both the terminals of the memory element.

Semiconductor integrated circuit, operating method thereof, and IC card including the circuit

A pair of electrodes are provided to sandwich an organic semiconductor layer. A lead-out electrode is provided to each of the organic semiconductor layer and the two electrodes constituting the pair of electrodes. Consequently, there is provided an organic semiconductor device having a simple configuration.

Organic semiconductor device, RF modulation circuit, and IC card

The present invention is aimed at decreasing the current required for writing in a magnetic random access memory (MRAM), and power consumption thereof. In a magnetic random access memory of the present invention, information is written in memory elements arranged in a same row or column by performing once each of the first information writing step of applying a first magnetic field to put memory elements in the high-resistance state, and the second information writing step of applying a second magnetic field to the memory elements in which the first information has not been written to write information in all memory elements in the same row under recording of information. Alternatively, a magnetic random access memory includes a plurality of first wirings for applying a magnetic field in the direction of the easy magnetization axis of a magnetic layer, and a plurality of second wirings for applying a magnetic field in a direction inclined from the direction of the easy magnetization axis of the magnetic layer, wherein a current is passed through one of the second wirings to apply a magnetic field to all memory elements arranged in a same row or column of the rows or columns of a plurality of the memory cells arranged in parallel to the second wirings, and currents are passed through the plurality of first wirings in directions according to the information to be recorded in the respective memory elements synchronously with the current pulse passed through the second wiring to apply a magnetic field to each of the magnetoresistive elements, thereby recording information on the plurality of memory elements arranged in the same row or column.

Nonvolatile solid-state memory and method of driving the same

TMR elements in a magnetic memory device are formed to be flat to enable their stable operations. A TMR element is formed by putting a tunnel barrier layer being a non-magnetic layer between an upper magnetic layer and a lower magnetic layer, both having a perpendicular magnetic anisotropy. A conductive local connect elongating in a plane is formed on a second plug formed in a contact hole formed in a second and a third inter-layer insulating films. The TMR element is formed on the local connect at a position avoiding a position right above the second plug. The TMR element is connected with the upper surface of the second plug through the local connect. A bit line through which an electric current for applying a magnetic field to the TMR element flows is formed at a position shifted from a position right above the TMR element in a plane.

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Tokyo, Japan

Tadahiko Hirai