Corning Incorporated

Soitec

S.o.i.tec Silicon on Insulator Technologies

Ta-Ko Chuang

Robert George Manley

Nadia Ben Mohamed

Daniel Delprat

Jeffrey Scott Cites

Robert Alan Bellman

Alexander Mikhailovich Streltsov

Mark Alejandro Quesada

Yunfeng Gu

Paul Arthur Sachenik

Daniel Ralph Harvey

Alex Usenko

Alexander Usenko

A method of forming a hermetic barrier layer comprises sputtering a thin film from a sputtering target, wherein the sputtering target includes a sputtering material such as a low Tglass, a precursor of a low Tglass, or an oxide of copper or tin. During the sputtering, the formation of defects in the barrier layer are constrained to within a narrow range and the sputtering material is maintained at a temperature of less than 200&#xb0; C.

High rate deposition systems and processes for forming hermetic barrier layers

There is disclosed a method for chemically treating a display glass substrate by treating at least one surface of the glass substrate with a heated solution containing HCl to form a depletion layer at the surface and under the surface of the glass substrate. The disclosure also relates to display glass substrates containing the depletion layer made by the disclosed process. In addition, the disclosure relates to methods of making thin-film transistors ('TFTs') on these display glass substrates by depositing a Si layer directly on the chemically treated surface of the glass substrate, and annealing the Si layer to form polycrystalline silicon.

Method for forming a glass substrate with a depleted surface layer and polycrystalline-silicon TFT built thereon

A method for fabricating a high-density array of holes in glass comprises providing a glass sheet having a front surface and irradiating the glass sheet with a laser beam so as to produce open holes extending into the glass sheet from the front surface of the glass sheet. The beam creates thermally induced residual stress within the glass around the holes, and after irradiating, the glass sheet is annealed to eliminate or reduce thermal stress caused by the step of irradiating. The glass sheet is then etched to produce the final hole size. Preferably, the glass sheet is also annealed before the step of irradiating, at sufficiently high temperature for a sufficient time to render the glass sheet dimensionally stable during the step of annealing after irradiating.

High-speed micro-hole fabrication in glass

A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.

Semiconductor on glass substrate with stiffening layer

A process of making semiconductor-on-glass substrates having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer between the silicon film and the glass in an ion implantation thin film transfer process by depositing a stiffening layer or layers on one of the donor wafer or the glass substrate in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.

Process of making semiconductor on glass substrates with a stiffening layer

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Painted Post, NY, United States of America

Ta-Ko Chuang