Macronix International Co., Ltd.

Ta-Kang Chu

Yao-Fu Chan

Chen-Chin Liu

Chun-Pei Wu

Cheng-Ming Yih

Jung-Chuan Ting

A method for fabricating a floating gate memory device comprises using thin buried diffusion regions with increased encroachment by a buried diffusion oxide layer into the buried diffusion layer and underneath the tunnel oxide under the floating gate. Further, the floating gate polysilicon layer has a larger height than the buried diffusion height. The increased step height of the gate polysilicon layer to the buried diffusion layer, and the increased encroachment of the buried diffusion oxide, can produce a higher GCR, while still allowing decreased cell size using a virtual ground array design.

Apparatus and associated method for making a floating gate cell in a virtual ground array

A memory and a method of fabricating the same are provided. The memory is disposed on a substrate in which a plurality of trenches is arranged in parallel. The memory includes a gate structure and a doped region. The gate structure is disposed between the trenches. The doped region is disposed at one side of the gate structure, in the substrate between the trenches and in the sidewalls and bottoms of the trenches. The top surface of the doped region in the substrate between the trenches is lower than the surface of the substrate under the gate structure by a distance, and the distance is greater than 300 &#x212b;.

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Kaohsiung, Taiwan

Ta-Kang Chu