Mediatek Corporation

Taiwan Semiconductor Manufacturing Comp. Ltd.

Ta-Jen Yu

Wen-Sung Hsu

Tzu-Hung Lin

Andrew C Chang

Nai-Wei Liu

Yen-Yao Chi

Ming-Chieh Lin

Ching-Liou Huang

Chin-Yu Ku

Hsiu-Mei Yu

Chi-Yuan Chen

Shih-Chin Lin

Sheng-Hsiang Chiu

Chun-Ying Lin

Young-Chang Lien

Tzu Hung Lin

Yu-Sheng Hung

A semiconductor package structure includes a semiconductor die, a redistribution layer (RDL) structure, a protective insulating layer, and a conductive structure. The semiconductor die has a first surface, a second surface opposite the first surface, and a third surface adjoined between the first surface and the second surface. The RDL structure is on the first surface of the semiconductor die and is electrically coupled to the semiconductor die. The protective insulating layer covers the RDL structure, the second surface and the third surface of the semiconductor die. The conductive structure passes through the protective insulating layer and is electrically coupled to the RDL structure.

Chip scale package structure and method of forming the same

A semiconductor package structure including a semiconductor die having a first surface, a second surface opposite the first surface, and a third surface adjoined between the first surface and the second surface. A first protective insulating layer covers the first and third surfaces of the semiconductor die. A redistribution layer (RDL) structure is electrically coupled to the semiconductor die and surrounded by the first protective insulating layer on the first surface of the semiconductor die. A first passivation layer covers the first protective insulating layer and the RDL structure. At least one conductive structure passes through the first passivation layer and is electrically coupled to the RDL structure. A method of forming the semiconductor package is also provided.

The invention provides a semiconductor package and a method for fabricating a base for a semiconductor package. The semiconductor package includes a conductive trace embedded in a base. A semiconductor device is mounted on the conductive trace via a conductive structure.

Semiconductor package and method for fabricating base for semiconductor package

The invention provides a semiconductor package and a method for fabricating a base for a semiconductor package. The semiconductor package includes a base. The base has a device-attach surface. A radio-frequency (RF) device is embedded in the base. The RF device is close to the device-attach surface.

The invention provides a semiconductor package. The semiconductor package includes a semiconductor die and a conductive pillar bump structure and a conductive plug. The semiconductor die has a die pad thereon. The conductive pillar bump structure is positioned overlying the die pad. The conductive pillar bump structure includes an under bump metallurgy (UBM) stack having a first diameter and a conductive plug on the UBM stack. The conductive plug has a second diameter that is different than the first diameter.

Semiconductor package with rigid under bump metallurgy (UBM) stack

In one configuration, a semiconductor package includes a conductive trace embedded in a base and a semiconductor device mounted on the conductive trace via a conductive structure, wherein the conductive structure is a bump structure and the width of the bump structure is bigger than the width of the conductive trace. In another configuration, a method for fabricating a semiconductor package includes providing a base, forming at least one conductive trace on the base, forming an additional insulation material on the base, and defining patterns upon the additional insulation material, wherein the pattern is formed on at least one conductive trace, wherein the conductive structure is a bump structure and the width of the bump structure is bigger than the width of the conductive trace.

A semiconductor package is provided. In one configuration, the semiconductor package includes a substrate having a die attach surface. A conductive trace is disposed on the substrate, wherein the conductive trace is elongated and carries a signal or a ground across at least a portion of the substrate. A die is mounted on the die attach surface of the substrate via a conductive pillar bump, the conductive pillar bump being rounded and elongated such that the conductive pillar bump extends along a length of the conductive trace and contacts the conductive trace at an end or at an intermediate portion thereof. The die further includes a metal pad electrically coupling to the conductive pillar bump, wherein the metal pad has a first edge and a second edge substantially vertical to the first edge, and wherein the first edge is not adjacent to the second edge.

Semiconductor package

The invention provides a semiconductor package and a method for fabricating the same. The semiconductor package includes a redistribution layer (RDL) structure, a semiconductor die, a molding compound and a supporter. The RDL structure has a first surface and a second surface opposite to the first surface. The semiconductor die is disposed on the first surface of the RDL structure and electrically coupled to the RDL structure. The molding compound is positioned overlying the semiconductor die and the first surface of the RDL structure. The supporter is positioned beside the semiconductor die and in contact with the first surface of the RDL structure.

Semiconductor package with embedded supporter and method for fabricating the same

The invention provides a semiconductor package. The semiconductor package includes a base having a device-attach surface and a solder-ball attach surface opposite to the device-attach surface. A conductive via is disposed passing through the base. The conductive via includes a first terminal surface aligned to the device-attach surface of the base. A semiconductor die is mounted on the base by a conductive structure. The conductive structure is in contact with the first terminal surface of the conductive via.

A package substrate is provided. The package substrate includes a dielectric layer and a passive component embedded in the dielectric layer and contacting the dielectric layer. A circuit layer is embedded in the dielectric layer and has a first surface aligned with a second surface of the dielectric layer. A conductive structure is embedded in the dielectric layer and electrically connected to the passive component and the circuit layer. A chip package is also provided.

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Taichung, Taiwan

Ta-Jen Yu