Taiwan Semiconductor Manufacturing Comp. Ltd.

Ta-Ching Wei

Shih-Chi Kuo

Tsung-Hsien Lee

A method for forming a semiconductor device structure is provided. The method includes forming a first gate stack structure and a second gate stack structure on a substrate, and the first gate stack structure includes a first spacer adjacent to the second gate stack structure. The method also includes forming an U-shaped capping layer between the first gate stack structure and the second gate stack structure, and a lateral sidewall of the U-shaped capping layer is in direct contact with the first spacer of the first gate stack structure. A top of the lateral sidewall of the U-shaped capping layer is below a top of the first spacer of the first gate stack structure.

Semiconductor device structure and method of manufacturing the same

In accordance with some embodiments, a semiconductor device structure is provided. The semiconductor device structure includes a substrate, and the substrate has a cell region and a logic region. The semiconductor device structure also includes an isolation feature formed in the substrate and a first gate stack structure formed on the isolation feature and at the cell region. The semiconductor device structure further includes a second gate stack structure formed on the isolation feature and at the cell region, and the first gate stack structure is adjacent to the second gate stack structure. The isolation feature between the first gate stack structure and the second gate stack structure has a substantially planar topography.

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Taichung, Taiwan

Ta-Ching Wei