United Microelectronics Corp.

Ta-Chi Kuo

Meng-Jin Tsai

Jyh-Kuang Lin

Kuo-Jaan Su

Kuang-Chung Cheng

A process for fabricating semiconductor devices having lightly-doped regions in its drain and/or source. The semiconductor device has a gate structure formed on its substrate, and the sidewalls of the gate structure covered by sidewall spacers. The sidewall spacers having a selected thickness obstructs the impurity implantation and constitutes a lightly-doped region in addition to the relatively heavily-doped regions that are not obstructed during the implantation process. Both the lightly- and heavily-doped regions together constitute the drain and/or source of the semiconductor device.

Process of fabricating semiconductor devices having lightly-doped drain

A field effect transistor has been developed with one source and one drain but with two independent active regions. It is shown how a double switching characteristic can be obtained with this structure which is described along with a process for its manufacture.

Growing community of inventors

Hsinchu, Taiwan

Ta-Chi Kuo