National Cheng-kung University

Taiwan Semiconductor Manufacturing Comp. Ltd.

Ta-Cheng Wei

Chia-Yun Chen

Keng-Ying Liao

Su-Yu Yeh

Po-Zen Chen

Huai-jen Tung

Po-Hsuan Hsiao

Chin-Yu Lin

Meng-Chen Lo

Tzu-Yu Ou

A method for manufacturing modified metal nanoparticles includes steps as follows. Metal nanoparticles are provided, wherein each of the metal nanoparticles is a gold nanoparticle or a silver nanoparticle. An ascorbic acid solution is provided, wherein the ascorbic acid solution includes ascorbic acid molecules and/or ascorbic acid ions. A surface modification step is conducted, wherein the metal nanoparticles and the ascorbic acid solution are mixed, such that surfaces of the metal nanoparticles are modified by the ascorbic acid molecules and/or ascorbic acid ions to obtain the modified metal nanoparticles.

Modified metal nanoparticle and method for manufacturing the same

A method for manufacturing a silver-carbon composite includes steps as follows. A carbon-containing solution is provided, wherein a carbon-containing material is subjected to a calcination step and is dissolved by a solvent to obtain the carbon-containing solution. The carbon-containing solution includes a plurality of carbon nanodots, and the carbon nanodots are negatively charged. A silver ion-containing solution is provided, wherein the silver ion-containing solution includes a plurality of silver ions. The carbon-containing solution and the silver ion-containing solution are mixed to obtain a mixed solution. The mixed solution is heated, such that at least one of the silver ions is reduced on at least one of the carbon nanodots to obtain the silver-carbon composite.

Method for manufacturing silver-carbon composite

A method for fabricating a semiconductor device is provided. The method includes forming a metal catalyst layer on an etching area of the semiconductor substrate; performing a wet etch process to the semiconductor substrate to etch the etching area of the semiconductor substrate under the metal catalyst layer, thereby forming a trench in the semiconductor substrate; and removing the metal catalyst layer from the semiconductor substrate after performing the wet etch process.

Method for forming a semiconductor device

Growing community of inventors

Tainan, Taiwan

Ta-Cheng Wei