Epistar Corporation

National Applied Research Laboratories

Ta-Cheng Hsu

Min-Hsun Hsieh

Ya-Ju Lee

Ya-Lan Yang

Ying-Yong Su

Chao-Shun Huang

Ching-Shian Yeh

Chiu-Lin Yao

Jung-Min Hwang

Chien-Fu Shen

Tsun-Kai Ko

Chih-Chiang Lu

De-Shan Kuo

Schang-Jing Hon

Wei-Chih Peng

Ting-Chia Ko

Shih-Pang Chang

Shih-Chang Lee

Jen-Inn Chyi

Chien-Kai Chung

Rong-Ren Lee

Meng-Yang Chen

Yen-Wen Chen

Wei-Shou Chen

Szu-Hung Chen

Wen-Kuan Yeh

Guang-Li Luo

Chung-jen Chung

Tzer-Perng Chen

Hsin-Mao Liu

Chien-Yuan Wang

Tsung-Xian Lee

Yu-Jiun Shen

Meng-Lun Tsai

Cheng Nan Han

Meng-Yuan Hong

Ching-Fu Tsai

Wei-Tsuen Ye

Wu-Tsung Lo

Pai-Hsiang Wang

Ming-Ta Chin

Hung-Chih Yang

Chi-Wei Lu

Sheng-Horng Yen

Chun-Yi Lin

Ml Tsai

Yeung-Sy Su

Chung-Yuan Li

Meng-Lnn Tsai

Min-Hsun Liu

Ya Lan Yang

Wei-ching Guo

Chia-min Chang

A method for forming an acoustic wave device, including steps of: forming an acoustic wave sensing part and an acoustic wave reflecting part, wherein the step of forming the acoustic wave sensing part includes: providing a first substrate, forming a sensing layer on the first substrate, forming a bottom electrode on a side of the sensing layer, and forming a filling layer on the sensing layer and the bottom electrode; and wherein the step of forming the acoustic wave reflecting part includes: providing a second substrate, forming a reflecting element on the second substrate, and forming a cover layer on the reflecting element; joining the acoustic wave sensing part and the acoustic wave reflecting part; removing the first substrate; and forming a top electrode on another side of the sensing layer, wherein the bottom electrode, the top electrode and the reflecting element are arranged correspondingly to each other.

Acoustic wave device and forming method thereof

An acoustic wave device, includes piezoelectric layer having an upper piezoelectric surface and a lower piezoelectric surface; an upper electrode formed on the upper piezoelectric surface; a lower electrode; a support layer including a non-monocrystalline insulating material; and a lower cover, wherein the lower electrode and the support layer formed between the lower cover and the lower piezoelectric surface.

Acoustic wave device and manufacturing method thereof

An acoustic wave element includes: a substrate; a bonding structure on the substrate; a support layer on the bonding structure; a first electrode including a lower surface on the support layer; a cavity positioned between the support layer and the first electrode and exposing a lower surface of the first electrode; a piezoelectric layer on the first electrode; and a second electrode on the piezoelectric layer, wherein at least one of the first electrode and the second electrode includes a first layer and a second layer that the first layer has a first acoustic impedance and a first electrical impedance, the second layer has a second acoustic impedance and a second electrical impedance, wherein the first acoustic impedance is higher than the second acoustic impedance, and the second electrical impedance is lower than the first electrical impedance.

A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semiconductor layer.

Heterogeneously integrated semiconductor device and manufacturing method thereof

A light-emitting device comprises a textured substrate comprising a plurality of textured structures, wherein the textured structures and the textured substrate are both composed of sapphire; and a light-emitting stack overlaying the textured substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, wherein each of the plurality of textured structures comprises a top portion having a first top-view shape, and a bottom portion parallel to the top portion and having a second top-view shape, wherein the first top-view shape comprises a circle or an ellipse, the first top-view shape comprises a first periphery and the second top-view shape comprises a second periphery, the first periphery is enclosed by the second periphery, and various distances are between each of the first periphery and the second periphery.

Light-emitting device having a patterned substrate and the method thereof

A heterogeneously integrated semiconductor device includes a substrate comprising a first material; a recess formed within the substrate and having a bottom portion with a first width, a top portion with a second width and a middle portion with a third width larger than the first width and the second width; and a first semiconductor layer filled in the bottom portion and including a second material different from the first material.

A heterogeneously integrated semiconductor devices includes a base substrate; a Ge-containing film formed on the base substrate; a PMOSFET transistor having a first fin formed on the Ge-containing film; and a NMOSFET transistor having a second fin formed on the Ge-containing film; wherein the PMOSFET transistor and the NMOSFET transistor compose a CMOS transistor, and the first fin comprises Ge-containing material and the second fin comprises a Group III-V compound.

A light-emitting device comprises a textured substrate comprising a plurality of textured structures, wherein the textured structures and the textured substrate are both composed of sapphire; and a light-emitting stack overlaying the textured substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, wherein one of the plurality of textured structures comprises a top portion and a bottom portion, wherein a first distance between a first projection of the top portion on the bottom portion and the bottom portion at one side is different from a second distance between a second projection of the top portion on the bottom portion and the bottom portion at another side.

This disclosure relates to a light-emitting apparatus comprising a submount, a chip carrier formed on the submount, a light-emitting chip formed on the chip carrier, a reflecting cup formed on the submount and enclosing the light-emitting chip and the chip carrier, and a transparent encapsulating material for encapsulating the light-emitting chip.

Light emitting device

A method of manufacturing a light-emitting device comprising the steps of cutting a substrate by a laser beam to form a cavity in the substrate and generate a by-product directly on the substrate by the cutting, and removing the by-product by a chemical solution containing an acid under a predetermined cleaning temperature.

Method for manufacturing high efficiency light-emitting diodes

A light-emitting device comprises a textured substrate comprising a boundary and a plurality of textured structures within the boundary, wherein the textured structures and the textured substrate are both composed of sapphire; and a light-emitting stack overlaying the textured substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, wherein each of the plurality of textured structures comprises a top portion having a first top-view shape and a bottom portion parallel to the top portion, the bottom portion having a second top-view shape, wherein the first top-view shape comprises a circle or ellipse and the second top-view shape comprises a polygon, wherein the first top-view shape and the second top-view shape overlap each other, and the textured structures are spaced apart from each other from a top view of the light-emitting device.

Light-emitting device

An integrated lighting apparatus comprises a first control device including a semiconductor substrate, an integrated circuit block formed above a first portion of the semiconductor substrate, and a plurality of power pads formed above the integrated circuit block; a first light emitting device formed above a second portion of the semiconductor substrate; and a through plug passing through the semiconductor substrate for electrically connecting the first control device and the first light emitting device.

Integrated lighting apparatus and method of manufacturing the same

An optoelectronic device comprising, a substrate and a first transition stack formed on the substrate comprising a first transition layer formed on the substrate having a hollow component formed inside the first transition layer, a second transition layer formed on the first transition layer, and a reflector rod formed inside the second transition layer.

Optoelectronic device and method for manufacturing the same

Growing community of inventors

Hsinchu, Taiwan

Ta-Cheng Hsu