Mediatek Corporation

Szu-Ying Cheng

Bo-Wei Hsieh

Jou-Ling Chen

Tai-Ying Jiang

Chun-Fang Peng

Jien-Jia Su

Chen-Chieh Wang

Fumin Huang

An electronic system is provided. A memory device includes a plurality of bank groups. A controller is coupled to the memory device and includes a request queue. The request queue is configured to store a plurality of requests. When the requests correspond to the different bank groups, the controller is configured to access data of the memory device according to a plurality of long burst commands corresponding to the requests. When the requests correspond to the same bank group, the controller is configured to access the data of the memory device according to a plurality of short burst commands corresponding to the requests. The short burst commands correspond to a short burst length, and the long burst commands correspond to a long burst length. The long burst length is twice the short burst length. The memory device is a low-power double data rate synchronous dynamic random access memory.

Electronic system and method for controlling burst length to access memory device of electronic system

One or more values associated with a first configuration setting for a first circuit may be stored in a first set of one or more registers when an operation of the first circuit is based at least in part on one or more values associated with a second configuration setting stored in a second set of one or more registers. In response to receiving an indication of a change in an operating frequency or voltage of the first circuit, the one or more values stored in the second set of one or more registers may be changed by loading the one or more values associated with the first configuration setting stored in the first set of one or more registers into the second set of one or more registers in a parallel fashion.

Hardware-accelerated dynamic voltage and frequency scaling

Growing community of inventors

Hsinchu, Taiwan

Szu-Ying Cheng