Taiwan Semiconductor Manufacturing Comp. Ltd.

Szu-Ping Lee

Chi On Chui

Chia-Jen Chen

Shiang-Bau Wang

Wan-Yi Kao

Che-Hao Chang

Chun-Heng Chen

An Chyi Wei

Cheng-Chung Chang

Chen-Huang Huang

Ming-Jhe Sie

Shao-Hua Hsu

Yung-Cheng Lu

Chih-Tang Peng

Yuan-Ching Peng

Sung-En Lin

Yu-Bey Wu

Jian-Shiou Huang

Ying-Yan Chen

Yu-Shan Lu

Yi-Cheng Li

Yu-Fan Peng

In an embodiment, a method includes: forming a first fin and a second fin extending from a semiconductor substrate; depositing a liner layer along a first sidewall of the first fin, a second sidewall of the second fin, and a top surface of the semiconductor substrate, the liner layer formed of silicon oxynitride having a nitrogen concentration; depositing a fill material on the liner layer, the fill material formed of silicon; annealing the liner layer and the fill material, the annealing converting the fill material to silicon oxide, the annealing decreasing the nitrogen concentration of the liner layer; and recessing the liner layer and the fill material to form an isolation region between the first fin and the second fin.

Methods of forming semiconductor devices

In an embodiment, a method of forming a semiconductor device includes forming a dummy gate stack over a substrate; forming a first spacer layer over the dummy gate stack; oxidizing a surface of the first spacer layer to form a sacrificial liner; forming one or more second spacer layers over the sacrificial liner; forming a third spacer layer over the one or more second spacer layers; forming an inter-layer dielectric (ILD) layer over the third spacer layer; etching at least a portion of the one or more second spacer layers to form an air gap, the air gap being interposed between the third spacer layer and the first spacer layer; and forming a refill layer to fill an upper portion of the air gap.

Air spacer and method of forming same

Semiconductor device and method

A method for manufacturing a semiconductor structure includes forming a fin over a substrate, wherein the fin includes first semiconductor layers and second semiconductor layers alternating stacked. The method also includes forming an isolation feature around the fin, forming a dielectric feature over the isolation feature, forming a cap layer over the fin and the dielectric feature, oxidizing the cap layer to form an oxidized cap layer, forming source/drain features passing through the cap layer and in the fin, removing the second semiconductor layers in the fin to form nanostructures, and forming a gate structure wrapping around the nanostructures.

Semiconductor structure and method for manufacturing the same

In an embodiment, a method includes: forming a first fin and a second fin extending from a semiconductor substrate; depositing a liner layer along a first sidewall of the first fin, a second sidewall of the second fin, and a top surface of the semiconductor substrate, the liner layer formed of silicon oxynitride having a nitrogen concentration in a range of 5% to 30%; depositing a fill material on the liner layer, the fill material formed of silicon; annealing the liner layer and the fill material, the annealing converting the fill material to silicon oxide, the annealing decreasing the nitrogen concentration of the liner layer to a range of 1% to 5%; and recessing the liner layer and the fill material to form an isolation region between the first fin and the second fin.

A semiconductor device structure is provided. The semiconductor device structure includes a fin structure protruding from a semiconductor substrate. The fin structure includes a first portion and an overlying second portion. The first portion is formed of a material that is the same as that of the semiconductor substrate and different from that of the second portion. The semiconductor device structure also includes a liner structure and an isolation feature. The liner structure includes a carbon-doped silicon oxide film covering the semiconductor substrate and the first portion of the first fin structure and a nitrogen-containing film over the carbon-doped silicon oxide film. The isolation feature is over the nitrogen-containing film and surrounded by the liner structure.

FinFET device with oxidation-resist STI liner structure

Growing community of inventors

Changhua County, Taiwan

Szu-Ping Lee