United Microelectronics Corp.

Szu-Hao Lai

Chin-Cheng Chien

Tien-Wei Yu

Yu-Shu Lin

Ming-Hua Chang

Yu-Ren Wang

Chun-Yuan Wu

Tsai-Yu Wen

Chiu-Hsien Yeh

Po-Chun Chen

Chun-Ling Lin

Chih-Hsun Lin

Hsin-Kuo Hsu

Te-Lin Sun

Che-Nan Tsai

Chien-Li Kuo

Chi-Mao Hsu

Tsun-Min Cheng

Tsuo-Wen Lu

Ching-Li Yang

Huei-Ru Tsai

Jia-Jia Chen

Ching-Wei Hsu

Po-Hsieh Lin

Yi-Chuen Eng

Ming-Chih Chen

A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor body, a first doped region, a second doped region, a gate and a dielectric layer. The semiconductor body is disposed on a dielectric substrate and has a protrusion portion, a first portion and a second portion. The first portion and the second portion are respectively disposed at two opposite sides of the protrusion portion. The first doped region is disposed in a top of the protrusion portion. The second doped region is disposed in an end of the first portion far away from the protrusion portion. The gate is disposed on the first portion and adjacent to the protrusion portion. The dielectric layer is disposed between the gate and the protrusion portion, and between the gate and the first portion.

Semiconductor device and fabrication method thereof

A semiconductor process includes the following steps. Two gates are formed on a substrate. A recess is formed in the substrate beside the gates. A surface modification process is performed on a surface of the recess to modify the shape of the recess and change the contents of the surface.

Semiconductor process for modifying shape of recess

A method of forming a semiconductor device is disclosed. At least one gate structure is provided on a substrate, wherein the gate structure includes a first spacer formed on a sidewall of a gate. A first disposable spacer material layer is deposited on the substrate covering the gate structure. The first disposable spacer material layer is etched to form a first disposable spacer on the first spacer. A second disposable spacer material layer is deposited on the substrate covering the gate structure. The second disposable spacer material layer is etched to form a second disposable spacer on the first disposable spacer. A portion of the substrate is removed, by using the first and second disposable spacers as a mask, so as to form two recesses in the substrate beside the gate structure. A stress-inducing layer is formed in the recesses.

Method of forming semiconductor device

A through silicon via process includes the following steps. A substrate having a front side and a back side is provided. A passivation layer is formed on the back side of the substrate. An oxide layer is formed on the passivation layer.

Through silicon via process

A semiconductor structure includes a substrate, an oxide layer, a metallic oxynitride layer and a metallic oxide layer. The oxide layer is located on the substrate. The metallic oxynitride layer is located on the oxide layer. The metallic oxide layer is located on the metallic oxynitride layer. In addition, the present invention also provides a semiconductor process for forming the semiconductor structure.

Semiconductor structure and fabrication method thereof

An epitaxial process includes the following step. A recess is formed in a substrate. A seeding layer is formed to cover a surface of the recess. A buffer layer is formed on the seeding layer. An etching process is performed on the buffer layer to homogenize and shape the buffer layer. An epitaxial layer is formed on the homogenized flat bottom shape buffer layer.

Epitaxial process

A manufacturing method for a semiconductor device having a metal gate includes providing a substrate having at least a first semiconductor device formed thereon, forming a first gate trench in the first semiconductor device, forming a first work function metal layer in the first gate trench, and performing a decoupled plasma oxidation to the first work function metal layer.

Manufacturing method for semiconductor device having metal gate

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Kaohsiung, Taiwan

Szu-Hao Lai