Nan Ya Technology Corporation

Vivotek Inc.

Szu-Han Chen

Shing-Yih Shih

Hsu Chiang

Ching-Yuan Kuo

Pei-Hsien Lin

The present disclosure provides a semiconductor structure and a method for forming the semiconductor structure. The semiconductor structure includes: a polysilicon layer, having a first surface and a second surface opposite to the first surface; a substrate, disposed on the second surface of the polysilicon layer; a bit line structure, disposed on the substrate, penetrating through the polysilicon layer and protruding from the first surface of the polysilicon layer; and a spacer structure, disposed on lateral sidewalls of the bit line structure, including an air gap sandwiched by a first dielectric layer and a second dielectric layer, wherein a first portion of the second dielectric layer is in the polysilicon layer, a second portion of the second dielectric layer is outside the polysilicon layer, and a thickness of the second portion of the second dielectric layer is less than a thickness of the first portion of the second dielectric layer.

Semiconductor structure and method for forming the same

A method of manufacturing a semiconductor device includes: forming a first patterned target layer on a substrate having a first region and a second region, the first patterned target layer has first stripes and first openings along a first direction; sequentially forming a lower hardmask layer and a middle hardmask layer covering the first patterned target layer; forming a patterned upper hardmask layer on the middle hardmask layer, the patterned upper hardmask layer has second stripes and second openings along a second direction and exposing a portion of the middle hardmask layer; etching the exposed portion of the middle hardmask layer to form third openings exposing a portion of the lower hardmask layer; and etching the exposed portion of the lower hardmask layer and the first patterned target layer thereunder to form a second patterned target layer having rounded patterns on the first region.

Method of manufacturing semiconductor device

An image calibrating method for stitching images includes calculating contrast values of a plurality of images, and comparing the contrast values to set the image with maximal contrast value as a reference image; others of the plurality of images are set as target images. The image calibrating method further includes calculating cumulative distribution functions of the reference image and the target images respectively, and obtaining a transform function according to the cumulative distribution functions of the reference image and the target images for pixel adjustment of the target images. Further, a camera with an image calibrating function and a related image processing system are disclosed in the present invention.

Growing community of inventors

Taipei, Taiwan

Szu-Han Chen