Applied Materials, Inc.

Sze Chieh Tan

John Leonard Sudijono

Vicknesh Sahmuganathan

Abhijit Basu Mallick

Eswaranand Venkatasubramanian

Thai Cheng Chua

Kian Ping Loh

Jenn-Yue Wang

Jiteng Gu

Zhongxin Chen

Christian Valencia

Jiecong Tang

Haisen Xu

Yuanxing Han

Masahiro Kawasaki

Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a plasma to form a nanocrystalline diamond film. The resulting nanocrystalline diamond films are formed on an interfacial oxide-rich amorphous layer between the nanocrystalline diamond film and a silicon substrate.

Nanocrystalline diamond with amorphous interfacial layer

Apparatuses and methods for forming a film on a substrate are described. The film is formed on the substrate by depositing an adamantane monomer and an initiator on the substrate to form a polymerizable seed layer and curing the polymerizable seed layer to form a polyadamantane layer.

Method of forming a diamond film

Methods of depositing a nanocrystalline diamond film are described. The method may be used in the manufacture of integrated circuits. Methods include treating a substrate with a mild plasma to form a treated substrate surface, incubating the treated substrate with a carbon-rich weak plasma to nucleate diamond particles on the treated substrate surface, followed by treating the substrate with a strong plasma to form a nanocrystalline diamond film.

In situ nucleation for nanocrystalline diamond film deposition

Growing community of inventors

Singapore, Singapore

Sze Chieh Tan