Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Syuusaku Maeda

Hidenori Kamei

Kazuyuki Yamae

Tomoya Iwahashi

Hiroshi Fukshima

Masaharu Yasuda

Atsuhiro Hori

A method of manufacturing the semiconductor light emitting element comprises a semiconductor layer forming step of forming the multilayered nitride semiconductor layer on the first wafer having a transparent property; a bonding step of bonding the multilayered nitride semiconductor layer to the first wafer; a groove forming step of forming the groove extending from the lower surface of the first wafer to the multilayered nitride semiconductor layer; a light applying step of applying a first light to the lower surface of the multilayered nitride semiconductor layer through the first wafer to reduce a bonding force between the multilayered nitride semiconductor layer and the first wafer; a separating step of separating the first wafer from the multilayered nitride semiconductor layer; and a cutting step of cutting the second wafer along the groove to divide into a plurality of the semiconductor light emitting element.

Method of manufacturing semiconductor light emitting element

In a semiconductor light emitting device, in which a light emitting layer is formed on one surface of a conductive substrate, and an n-type electrode and a p-type electrode are formed on the same side as the light emitting layer, there has been the problem that, if larger electric power is applied, heat is generated near the n-side electrode to reduce luminous efficiency. The n-side electrode has a predetermined length at a corner portion or along an edge of the substrate to disperse a current flowing from the n-side electrode into the substrate, thereby avoiding heat generation near the n-side electrode. In this type of semiconductor light emitting element, the existence of the n-side electrode reduces a light emitting area. Therefore, the length of the n-side electrode preferably ranges from 20% to 50% of the entire peripheral length of the substrate.

Semiconductor light emitting element and semiconductor light emitting device using the same

The inventive method for manufacturing a semiconductor device is a method for manufacturing a semiconductor device using irradiation with laser light to partition a substrate having semiconductor layers formed thereon, with gallium contained in at least one of the substrate and the semiconductor layers, wherein the method comprises: forming grooves to be used as boundaries between individual substrates by irradiating the substrate along partitioning locations with laser light, immersing the substrate into an acid solution, and partitioning the substrate into individual substrates along the boundaries where grooves are formed. In this manner, it provides a method for manufacturing a semiconductor device in which, during the partitioning of a gallium-containing semiconductor device substrate, deposits of gallium compounds adhered during laser irradiation are removed, partitioning surfaces are formed flat and uniform, and the incidence of electrode continuity failures and resin peeling is low.

Semiconductor device

Method for manufacturing semiconductor device

Growing community of inventors

Kagoshima, Japan

Syuusaku Maeda