Sony Corporation

Murata Manufacturing Co., Ltd.

Sony Group Corporation

Syuuiti Takizawa

Michinori Shiomi

Daisuke Ito

Hideki Ono

Yosuke Saito

Yoshiaki Obana

Daisuke Hobara

Kazutaka Habu

Takeru Bessho

To provide a semiconductor film capable of realizing further enhancement of photoelectric conversion efficiency. The semiconductor film includes semiconductor nanoparticles and a compound represented by the following general formula (1), in which the compound represented by the general formula (1) is coordinated to the semiconductor nanoparticles. (In the general formula (1), X represents —SH, —COOH, —NH, —PO(OH), or —SO(OH), Arepresents —S, —COO, —PO(OH)O, or —SO(O), and n is an integer of 1 to 3. Brepresents Li, Na, or K.)

Semiconductor film and method of producing the same, photoelectric conversion element, solid-state imaging element and electronic apparatus

To provide a semiconductor film capable of realizing further enhancement of photoelectric conversion efficiency. The semiconductor film includes semiconductor nanoparticles and a compound represented by the following general formula (1), in which the compound represented by the general formula (1) is coordinated to the semiconductor nanoparticles. (In the general formula (1), X represents &#x2014;SH, &#x2014;COOH, &#x2014;NH, &#x2014;PO(OH), or &#x2014;SO(OH), Arepresents &#x2014;S, &#x2014;COO, &#x2014;PO(OH)O, or &#x2014;SO(O), and n is an integer of 1 to 3. Brepresents Li, Na, or K.)

A photoelectric conversion device of an embodiment of the technology includes: a first electrode and a second electrode facing each other; a photoelectric conversion layer provided between the first electrode and the second electrode; and a buffer layer provided between the first electrode and the photoelectric conversion layer, and having an interface, to which an organic molecule or a halogen element is coordinated, with the photoelectric conversion layer.

Photoelectric conversion device and imaging device

A negative electrode active material includes a core particle comprising silicon; and at least one metal element selected from the group consisting of: Ge, Sn, Ni, Mo, W, Ag, Pd, Cu, Bi, Fe, Co, Mn, Cr, V, Ga, B, Sb, In, Te, Cd, Rh, Ru, Nb, Ta, Re, Os, Ir, Pt, Pb and P. The negative electrode active material has an elemental composition that varies continuously from a center of the core particle to a surface of the core particle. A negative electrode, a battery, an electric vehicle, an electric storage apparatus, an electronic apparatus and a power storage system each include the negative electrode active material.

Negative electrode active material comprising silicon and at least one metal element, and battery, battery pack, electronic apparatus, electric vehicle, electrical storage apparatus and electricity system using same

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Tokyo, Japan

Syuuiti Takizawa