Murata Manufacturing Co., Ltd.

Syunsuke Kido

Masanori Kato

Hideki Iwamoto

Hiroshi Matsubara

Hajime Kando

Munehisa Watanabe

Morio Takeuchi

Yukiteru Sugaya

Keisuke Nishio

Yukiya Yamaguchi

Keiji Okada

Masanori Otagawa

Takanori Uejima

Hirotsugu Mori

Tetsuya Kimura

Motoji Tsuda

Takashi Yamane

Ryo Nakagawa

Atsushi Horita

Sho Nagatomo

Minefumi Ouchi

Jin Yokoyama

Yusuke Naniwa

Korekiyo Ito

Hiroyuki Kani

Sho Matsumoto

Yuuki Fukuda

Masanari Miura

Shinichi Okada

Minoru Iwanaga

Masaki Tada

Kentaro Nakamura

Tomomi Yasuda

Tomio Kanazawa

Ippei Hatsuda

Takuma Kuroyanagi

Hiroshi Shimizu

Naru Morito

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

Elastic wave device and method for manufacturing the same

To suppress degradation of characteristics, a high frequency module includes a mounting substrate, a first signal terminal, a second signal terminal, and ground terminals, and a hybrid filter. The hybrid filter is coupled between the first signal terminal and the second signal terminal. The hybrid filter includes an acoustic wave filter having at least one acoustic wave resonator, a first inductor, and a capacitor. The pass band width of the hybrid filter is larger than that of the acoustic wave resonator. A resin layer is disposed on a first principal surface of the mounting substrate. The resin layer covers at least part of the acoustic wave filter. A metal electrode layer covers at least part of the resin layer, and is coupled to the ground terminals. The second inductor is coupled between the hybrid filter and the second signal terminal.

High frequency module and communication device

An acoustic wave filter includes a first ladder circuit including a first series arm resonator and a first parallel arm resonator, a second ladder circuit including a second series arm resonator and a second parallel arm resonator, and a third ladder circuit including a third series arm resonator and a third parallel arm resonator. The first, second and third ladder circuits are cascade-connected in order. A condition of fas1>fas2>fas3>frp1>frp2>frp3 is satisfied, where fas1 represents an anti-resonant frequency of the first series arm resonator, fas2 represents an anti-resonant frequency of the second series arm resonator, fas3 represents an anti-resonant frequency of the third series arm resonator, frp1 represents a resonant frequency of the first parallel arm resonator, frp2 represents a resonant frequency of the second parallel arm resonator, and frp3 represents a resonant frequency of the third parallel arm resonator.

Acoustic wave filter

A hybrid filter includes a module substrate having a major surface and a major surface that are opposite to each other, acoustic wave resonator elements disposed at the module substrate, inductors disposed at the module substrate, and a capacitor disposed at the module substrate. The pass band of the hybrid filter is wider than the resonance band width of the acoustic wave resonator elements. One of the acoustic wave resonator elements, the inductors, and the capacitor is a first circuit element, and the first circuit element is disposed at the major surface. Another of the acoustic wave resonator elements, the inductors, and the capacitor is a second circuit element, and the second circuit element is disposed at the major surface.

Hybrid filter, multiplexer, radio-frequency module, and communication device

A multiplexer includes filters and low pass filters. A second frequency band and a third frequency band are partially different. A first frequency band does not overlap the second frequency band and the third frequency band. One end of the filter is connected to a common terminal and the other end is connected to an input/output terminal. The low pass filter is connected in one end to the common terminal and in the other end to one end of the filter. The other end of the filter is connected to one end of the low pass filter. The other end of the low pass filter is connected to the input/output terminal. One end of the filter is connected to a node between the other end of the low pass filter and one end of the filter and the other end of the filter is connected to the input/output terminal.

Multiplexer and communication device

In a radio-frequency module, a hybrid filter includes an acoustic wave filter including at least one acoustic wave resonator, an inductor having a winding portion, and a capacitor. A plurality of outer electrodes of the acoustic wave filter includes a first input and output electrode connected to a first signal terminal, a second input and output electrode connected to a second signal terminal, and a ground electrode connected to a ground terminal. The inductor is disposed on a first major surface of a mounting substrate and is adjacent to the acoustic wave filter in plan view in a thickness direction of the mounting substrate. When viewed in a direction of a winding axis of the winding portion of the inductor, an inner part of the winding portion in the inductor does not overlap any of the first input and output electrode, the second input and output electrode, and ground electrode.

Radio-frequency module and communication device

An acoustic wave device includes a piezoelectric layer that is made of lithium niobate or lithium tantalate, and a plurality of pairs of electrodes opposed to each other in a direction intersecting with a thickness direction of the piezoelectric layer, in which a bulk wave in a thickness shear primary mode is used or d/p is about 0.5 or lower when a thickness of the piezoelectric layer is d and a distance between centers of mutually adjacent electrodes among the plurality of pairs of electrodes is p. The plurality of pairs of electrodes include at least one pair of first electrodes of a first acoustic wave resonator and at least one pair of second electrodes of a second acoustic wave resonator. A direction orthogonal to a longitudinal direction of the second electrodes in the second acoustic wave resonator is inclined at an angle that is greater than 0° and smaller than 360° with respect to a direction orthogonal to a longitudinal direction of the first electrodes in the first acoustic wave resonator.

Acoustic wave device

An acoustic wave device includes a substrate, a first resonator, a second resonator, and a shared reflector. The second resonator is adjacent to the first resonator and has different frequency characteristics different than the first resonator. The first resonator includes a first interdigital transducer electrode. The second resonator includes a second interdigital transducer electrode. The shared reflector has frequency characteristics that are the same as both frequency characteristics of the first resonator and frequency characteristics of the second resonator or between the frequency characteristics of the first resonator and the frequency characteristics of the second resonator. a higher-order mode frequency of the first resonator and a higher-order mode frequency of the second resonator coincides. When the number of electrode fingers of the shared reflector is even, an electrode finger facing the shared reflector in the first interdigital transducer electrode and an electrode finger facing the shared reflector in the second interdigital transducer electrode have the same polarity. When the number of electrode fingers of the shared reflector is odd, an electrode finger facing the shared reflector in the first interdigital transducer electrode and an electrode finger facing the shared reflector in the second interdigital transducer electrode have opposite polarities.

Acoustic wave device, and ladder filter including the same

A filter device having a pass band and a stop band on a lower frequency side than the pass band includes a filter having a pass band including the pass band, a series arm resonator connected in series to the filter, a first inductor directly connected in series to the series arm resonator, and a parallel arm resonator connected between a node on a path connecting the filter and the series arm resonator and the ground. The parallel arm resonator constitutes a resonance circuit having a resonant frequency at which an attenuation pole corresponding to a high frequency end of the first stop band, and the series arm resonator and the inductor constitute a resonance circuit having an anti-resonant frequency on a lower frequency side than the pass band and having a sub-resonant frequency higher than a resonant frequency of the resonance circuit.

Filter device and multiplexer

A high frequency filter includes series arm resonators and parallel arm resonators as acoustic wave resonators and at least one inductor, wherein capacitive components of the acoustic wave resonators constitute an LPF and an HPF as hybrid filters with an inductor or with an inductor and a capacitor, and the at least one inductor includes inductors as mount component inductors.

High frequency filter, multiplexer, high frequency front-end circuit, and communication device

A high-frequency module includes a mounting substrate, a filter, and a common inductor. The mounting substrate includes a first main surface and a second main surface facing each other. The filter includes series arm resonators and parallel arm resonators, and is disposed on the first main surface. The mounting substrate includes a ground terminal on the second main surface. A first end of the common inductor is connected to all of the parallel arm resonators. A second end of the common inductor is connected to the ground terminal.

High-frequency module and communication device

A radio frequency circuit includes a first acoustic wave filter that is connected to a common terminal and includes a first acoustic wave resonator, a first LC filter that is connected to the common terminal via the first acoustic wave filter and includes at least one of an inductor or a capacitor, a second acoustic wave filter that is connected to the common terminal and includes a second acoustic wave resonator, and a second LC filter that is connected to the common terminal via the second acoustic wave filter and includes at least one of an inductor or a capacitor.

Radio frequency circuit and communication device

A filter circuit that secures the steepness from a pass range to an attenuation range while maintaining a wide-band transmission characteristic and a filter device including this filter circuit are formed. A filter circuit includes a first filter and a second filter. The first filter is a filter including an LC circuit in which a first frequency band is a pass band and a frequency band not higher than the first frequency band is an attenuation band. The second filter is a filter that attenuates a second frequency band within the first frequency band by using an attenuation pole produced by a resonance or an antiresonance of an acoustic wave resonator. Further, the first filter is placed closer to an antenna terminal than the second filter.

Filter circuit and filter device

A filter includes a first input/output electrode and the second input/output electrode, and is arranged on a first main surface of a mounting substrate. The mounting substrate includes a first land electrode, a second land electrode, a ground terminal, and a plurality of via conductors. The first land electrode is connected to the first input/output electrode. The second land electrode is connected to the second input/output electrode. The ground terminal is located closer to a second main surface side than the first main surface in a thickness direction of the mounting substrate. The plurality of via conductors is arranged between the first main surface and the second main surface, and is connected to the ground terminal. The plurality of via conductors is located between the first land electrode and the second land electrode in a plan view from the thickness direction of the mounting substrate.

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Nagaokakyo, Japan

Syunsuke Kido