Other

Syunji Nishikawa

Noboru Tokumasu

Hiroshi Ikakura

Takayoshi Azumi

Disclosed is a method for modifying a film-forming surface of a substrate, which is capable removing a base surface dependency in forming a film on the film-forming surface of the substrate prior to formation of a film by a thermal CVD method using a reactant gas containing an ozone-containing gas containing ozone (O,) in oxygen (O,) and Tetra-Ethyl-Ortho-Silicate. The method comprises the step of modifying the film-forming surface,of the substrate,by allowing any one of ammonia, hydrazine, an amine, gases thereof and aqueous solutions thereof to contact with the surface of the substrate before forming an insulating film,on the surface,of the substrate,.

Method for modifying a film forming surface of a substrate on which a film is to be formed, and method for manufacturing a semiconductor device using the same

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Tokyo, Japan

Syunji Nishikawa