Showa Denko K.k.

Syunji Horikawa

Hisayuki Miki

Hiromitsu Sakai

Mineo Okuyama

Hideki Tomozawa

Tetsuo Sakurai

Masato Kobayakawa

Hitoshi Takeda

Joseph Gaze

Akira Bandoh

An object of the present invention is to provide a low-resistance n-type Group III nitride semiconductor layered structure having excellent flatness and few pits. The inventive n-type group III nitride semiconductor layered structure comprises a substrate and, stacked on the substrate, an n-type impurity concentration periodic variation layer comprising an n-type impurity atom higher concentration layer and an n-type impurity atom lower concentration layer, said lower concentration layer being stacked on said higher concentration layer.

N-type group III nitride semiconductor layered structure

A Group III nitride semiconductor light emitting device having a light emitting layer () bonded to a crystal layer composed of an n-type or p-type Group III nitride semiconductor, the Group III nitride semiconductor light emitting device being characterized by comprising an n-type Group III nitride semiconductor layer () having germanium (Ge) added thereto and having a resistivity of 1&#xd7;10to 1&#xd7;10&#x3a9;cm. The invention provides a Ge-doped n-type Group III nitride semiconductor layer with low resistance and excellent flatness, in order to obtain a Group III nitride semiconductor light emitting device exhibiting low forward voltage and excellent light emitting efficiency.

Group III nitride semiconductor light emitting device

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Tokyo, Japan

Syunji Horikawa