Taiwan Semiconductor Manufacturing Comp. Ltd.

Syun Ming Jang

Chen-Hua Douglas Yu

Tsu Shih

Shen-Nan Lee

Chung Chi Ko

A method comprises forming a low-dielectric constant (low-k) layer over a semiconductor substrate, forming an anti-reflective layer over the low-k layer, forming at least one opening in the anti-reflective layer and in the low-k layer, forming a nitrogen-free liner in the at least one opening, and forming at least one recess through the nitrogen-free liner, the anti-reflective layer, and at least partially into the low-k layer, the at least one recess is disposed over the at least one opening.

Method of preventing photoresist poisoning of a low-dielectric-constant insulator

A bimodal slurry system for a chemical mechanical polishing process including a dispersion comprising a plurality of first particles and a plurality of at least one type of second particles said first particles having a mean particle diameter larger by at least a factor of 3 than a mean particle diameter of the at least one type of second particles said first particles further being compressible.

Bimodal slurry system

A method for forming a via through a dielectric layer within a microelectronics fabrication. There is first provided a substrate employed within a microelectronics fabrication. There is then formed upon the substrate a patterned first dielectric layer which defines a via accessing a contact region formed within the substrate. The patterned first dielectric layer is formed of a first dielectric material which is not susceptible to etching with an oxygen containing plasma. There is then formed upon the patterned first dielectric layer a blanket second dielectric layer which completely covers the patterned first dielectric layer and fills the via. The blanket second dielectric layer is formed of a second dielectric material which is susceptible to etching within the oxygen containing plasma. There is then formed upon the blanket second dielectric layer a blanket hard mask layer which is formed from a hard mask material which is not susceptible to etching within the oxygen containing plasma. There is then formed upon the blanket hard mask layer a patterned photoresist layer which leaves exposed a portion of the blanket hard mask layer greater that an areal dimension of the via and at least partially overlapping the areal dimension of the via. There is then etched while employing a first plasma etch method the blanket hard mask layer to form a patterned hard mask layer defining a first trench formed through the patterned hard mask layer while employing the patterned photoresist layer as a first etch mask layer. The first plasma etch method employs a first etchant gas composition appropriate to the hard mask material from which is formed the blanket hard mask layer. Finally, there is then etched while employing a second plasma etch method the blanket second dielectric layer to form a patterned second dielectric layer having an aperture formed therethrough. The aperture comprises: (1) a second trench corresponding with the first trench; and (2) at least a portion of the first via. The second plasma etch method employs the oxygen containing plasma.

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Hsin-Chu, Taiwan

Syun Ming Jang