Mitsubishi Denki Kabushiki Kaisha

Sumitomo Chemical Company, Limited

Syuji Doi

Akira Tsumura

Hiroshi Koezuka

Hiroyuki Fuchigami

Toshihiko Tanaka

A method of fabricating a field effect transistor including forming a gate electrode on an electrically insulating substrate; forming an electrically insulating film on the substrate covering the gate electrode; forming source and drain electrodes on the electrically insulating film on opposite sides of the gate electrode; forming a semiconducting film of a .pi.-conjugated polymer on the source and drain electrodes and on the electrically insulating film between the source and drain electrodes.

Method of making a field effect transistor

A method of fabricating a liquid crystal display device including a field effect transistor includes forming a gate electrode on an electrically insulating substrate, the gate electrode being located in a transistor region of the substrate; forming an electrically insulating film on the substrate and covering the gate electrode; forming source and drain electrodes on the electrically insulating film on opposite sides of the gate electrode in the transistor region; forming a display electrode on the electrically insulating substrate in a display region of the substrate, adjacent the transistor region, the drain electrode being electrically connected to the display electrode; and forming, in the transistor region, a semiconductor film of a .pi.-conjugated polymer on the source and drain electrodes and on the electrically insulating film between the source and drain electrodes in the transistor region; arranging a transparent plate, including a transparent electrode, opposite and spaced from the .pi.-conjugated polymer film and the display electrode with the transparent electrode opposite the display electrode; and injecting a liquid crystal material between the transparent and display electrodes and between the transparent plate and the .pi.-conjugated polymer film.

Method of making a liquid crystal display including a field effect

The present invention relates to a field effect transistor (FET element) in which a .pi.-conjugated polymer film serving as a semiconductor layer is manufactured by first forming a .pi.-conjugated polymer precursor film using a .pi.-conjugated precursor which is soluble in a solvent and then changing the precursor polymer film to the .pi.-conjugated polymer film. A liquid crystal display apparatus uses the FET element as an active drive element. A large number of the FET elements can be manufactured on a large area substrate at the same time at lost cost and operate stably. A large current flow between the source and drain can be significantly modulated by a voltage applied to the gate of the FET element.

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Takatsuki, Japan

Syuji Doi