Shin-etsu Handotai Co., Ltd.

Fujikoshi Machinery Corp.

Fujibo Holdings, Inc.

Syuichi Kobayashi

Junichi Ueno

Kazuya Sato

Yuki Tanaka

Hideo Kudo

Koji Kitagawa

Makoto Kobayashi

Tadakazu Miyashita

Atsushi Kajikura

Yoshinobu Nishimoto

Daichi Kitazume

Daisuke Takahashi

Kenji Iha

Toshinari Kinjo

Kohki Itoyama

A method for double-side polishing a wafer uses a double-side polishing machine wherein a carrier which is yet to be arranged in the double-side polishing machine is previously subjected to two-stage double-side polishing which uses a double-side polishing machine different from the double-side polishing machine adopted for double-side polishing the wafer and includes primary polishing using slurry containing abrasive grains and secondary polishing using an inorganic alkali solution containing no abrasive grain, the carrier subjected to the two-stage double-side polishing is arranged in the double-side polishing machine adopted for double-side polishing the wafer, and the double-side polishing of the wafer is performed. Consequently, the method for double-side polishing a wafer enables suppressing damages to wafers to be polished immediately after arranging the carrier between the upper and lower turntables.

Method for double-side polishing wafer

The present invention provides a method for evaluating a polishing pad by which a life of a polishing pad to polish a wafer is evaluated, the method being characterized in that a quantity of polishing residues deposited on the polishing pad is measured, and the life of the polishing pad is evaluated based on a measurement value provided by the measurement. Consequently, it is possible to provide the method for evaluating a polishing pad and the method for polishing a wafer that enable immediately evaluating the life of the polishing pad and also enable suppressing a reduction in productivity and a yield ratio at the time of polishing the wafer.

Method for evaluating polishing pad and method for polishing wafer

A method of producing a carrier for use in a double-side polishing apparatus, the method including engaging an insert with a holding hole formed in a carrier body and sticking the insert to the holding hole, the carrier body being configured to be disposed between upper and lower turn tables to which polishing pads are attached of the double-side polishing apparatus, the holding hole being configured to hold a wafer during polishing, the insert being configured to contact an edge of the wafer to be held, the method including: performing a lapping process and a polishing process on the insert; engaging the insert subjected to the lapping process and the polishing process with the holding hole of the carrier body; and sticking and drying the engaged insert while applying a load to the insert in a direction perpendicular to main surfaces of the carrier body.

Method of producing carrier for use in double-side polishing apparatus and method of double-side polishing wafers

A carrier for a double-side polishing apparatus comprising at least: a metallic carrier base that is arranged between upper and lower turn tables having polishing pads attached thereto and has a holding hole formed therein to hold a wafer sandwiched between the upper and lower turn tables at the time of polishing; and a ring-like resin insert that is arranged along an inner peripheral portion of the holding hole of the carrier base and is in contact with a peripheral portion of the held wafer, wherein an inner peripheral end portion of the holding hole of the carrier base has an upwardly opening tapered surface, an outer peripheral portion of the ring-like insert has a reverse tapered surface with respect to the tapered surface of the holding hole of the carrier base, and the resin insert is fitted in the holding hole of the carrier base through the tapered surface.

Carrier for a double-side polishing apparatus, double-side polishing apparatus using this carrier, and double-side polishing method

The present invention provides method of double-side polishing a wafer, including: simultaneously polishing both surfaces of the wafer by holding the wafer in a holding hole of a carrier, interposing the held wafer between upper and lower turn tables to which polishing pads are attached, rotating the carrier about an axis of the carrier and revolving the carrier; and repeating the polishing in a batch manner, wherein a direction in which the carrier is revolved is reversed every polishing batch while repeating the polishing in a batch manner. The method enables wafers with high flatness to be stably obtained while inhibiting reduction in productivity due to dressing.

Method of double-side polishing wafer

A double-side polishing apparatus including at least: upper and lower turn tables each having a polishing pad attached thereto; a carrier having a holding hole formed therein for holding a wafer between the upper and lower turn tables; a sensor for detecting a thickness of the wafer during polishing, the sensor being disposed in a through-hole provided at the upper turn table in a direction of an upper-turn-table rotation axis; and a sensor holder for holding the sensor, wherein a material of the sensor holder is quartz. As a result, there is provided a double-side polishing apparatus that can polish a wafer while the difference from the target wafer thickness is reduced by surely inhibiting deformation of the sensor holder due to the influence of heat generated during the polishing of the wafer.

Double-side polishing apparatus

A polishing pad capable of improving an affinity to polishing liquid and stabilizing polishing performance is provided. A polishing padis equipped with a urethane sheet. The urethane sheethas a polishing surface P for polishing an object to be polished. The urethane sheetis formed by a dry molding method and is formed by slicing a polyurethane foamed body which is obtained by reacting and curing mixed liquid in which an isocyanate-group containing compound, water, a foam control agent and a polyamine compound are mixed. Foamsare dispersed approximately uniformly inside the urethane sheet. Opened poreswhich are opened parts of the foamsare formed at the polishing surface P. Inside the urethane sheet, the foamsformed adjacently to each other are communicated by communication holes, and the communication holesare formed at a ratio of 800 holes/cmor more when observed from a side of the polishing surface P. Polishing liquid moves via the communication holesand the foams

Polishing pad, manufacturing method thereof and polishing method

Provided is a polishing apparatus comprising a lower stool (), a motor () and a speed reducer () for driving the lower stool, and a box () for covering at least the portion of the lower stool below the working action face. The polishing apparatus polishes a wafer by forcing the wafer to contact the lower stool and by rotating the lower stool. The box has its inside separated by partitions (and) into a plurality of regions, and the motor for driving the lower stool is arranged in a region other than the region containing the lower stool. The polishing apparatus can manufacture a wafer of a stable shape, irrespective of the time elapsed from the running start and the presence/absence of the stop of the polishing apparatus.

Polishing apparatus

A carrier for a double-side polishing apparatus, including at least: a carrier base placed between upper and lower turn tables, the carrier base having a holding hole therein, the holding hole holds the wafer sandwiched between the upper and lower turn tables. A ring-shaped resin ring disposed along an inner circumference of the holding hole, the resin ring protecting a chamfered portion by making contact with the chamfered portion of the held wafer, wherein the resin ring has a concave groove on an inner circumference thereof, upper and lower tapered surfaces are formed in the concave groove. A double-side polishing apparatus using the carrier and a double-side polishing method that can reduce the generation of taper in a polished surface and improve the flatness while suppressing the generation of an outer peripheral sag of the wafer.

Carrier for double-side polishing apparatus, double-side polishing apparatus using the same, and double-side polishing method

There is provided a double-side polishing method for a wafer of sandwiching a wafer held in a carrier between upper and lower turn tables each having a polishing pad attached thereto and simultaneously polishing both surfaces of the wafer while supplying a slurry to a space between the upper and lower turn tables from a plurality of slurry supply holes provided in the upper turn table, wherein a polishing amount at an outer peripheral portion of the wafer to be polished is adjusted and outer peripheral sag of the wafer is suppressed by supplying the slurry in such a manner that an amount of the slurry supplied from the slurry supply holes provided on an outer side relative to the center of rotation of the upper turn table becomes larger than an amount of the slurry supplied from the slurry supply holes provided on an inner side relative to the same at the time of polishing both the surfaces of the wafer. As a result, the double-side polishing method which can suppress occurrence of the outer peripheral sag of the wafer when the wafer is subjected to double-side polishing can be provided.

Double-side polishing method for wafer

A method for evaluating a wafer configuration includes: obtaining plural wafer configuration profiles from a central wafer portion to an edge portion along the entire periphery at a prescribed angular space; providing a first region for calculating a reference line for each profile in the central side of the wafer; calculating the reference line in the first region; providing a second region in the peripheral side of the wafer outside the first region; extrapolating the reference line calculated in the first region to the second region; analyzing a value obtained by subtracting the reference line value in the second region from an actually measured value in the second region; calculating the maximum value among the values as a surface characteristic and the minimum value among the values as a surface characteristic; and, evaluating configuration uniformity in the peripheral portion of the wafer from plural surface characteristics and surface characteristics.

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Shirakawa, Japan

Syuichi Kobayashi