Kabushiki Kaisha Toshiba

Tokyo Shibaura Electric Co., Ltd.

Syozo Sato

Masaru Nikaido

Katsuhisa Homma

Yoshiaki Ouchi

Yoshiharu Obata

Shunji Shirouzu

Sakae Kimura

Shigeharu Kawamura

Keiichi Saito

Susumu Kimijima

Yoshikazu Uemura

Kiyohito Kawasumi

An X-ray imaging tube comprising an vacuum envelope, and input screen located in the input end of the envelope, an output screen located in the output end of the envelope, an anode located in the output end of the envelope, and a plurality of beam-converging electrodes located in the envelope and arranged along the inner surface of the envelope. The tube has an magnification of used input field size of 2.3 or more. The components of the tube have such positions and sizes, thus satisfying the following relations:

X-ray imaging tube with specific positional and size relationship of

An output phosphor film used in an output screen of an image intensifier is made of ZnS or (Zn, Cd)S host material and at least one activator element selected from the group consisting of Cu, Ag, Au, Al, and Cl. The phosphor film is formed on a face plate by means of chemical vapor-deposition, or physical vapor deposition in an inert-gas atmosphere having a pressure of 1 Pa or more, and is heat-treated. The formed phosphor film has hexagonal (Wurtzite-type) crystal and/or cubic (sphalerite-type) crystal structure. These crystals are orientated such that the (002) planes of the hexagonal crystals and/or the (111) planes of the cubic crystals are substantially parallel to the face plate.

X-ray image intensifier and method of manufacturing the same

A semiconductor pressure converter includes a silicon pressure sensing element, a silicon base hermetically attached to the sensing element to bear the element and a metal pipe connected to the silicon base so as to introduce a pressure to the sensing element through the silicon base.

Semiconductor pressure converter

Growing community of inventors

Sagamihara, Japan

Syozo Sato