Denso Corporation

Sumco Corporation

Sumitomo Mitsubishi Silicon Corporation

Syouji Nogami

Shoichi Yamauchi

Tomonori Yamaoka

Takumi Shibata

Hitoshi Yamaguchi

Toshiyuki Morishita

Nobuhiro Tsuji

Tomoatsu Makino

Tsuyoshi Yamamoto

Hitoshi Goto

Shouichi Yamauchi

Yukichi Horioka

A contamination control method includes: a wafer loading step for loading a monitor wafer in a chamber of a vapor deposition apparatus; a heat-treatment repetition step for consecutively repeating a heat-treatment step for thermally treating the monitor wafer for predetermined times; a wafer unloading step for unloading the monitor wafer from the chamber; and a wafer-contamination-evaluation step for evaluating a metal-contamination degree of the monitor wafer unloaded out of the chamber. The heat-treatment step includes a first heat-treatment step for thermally treating the monitor wafer in an atmosphere of a hydrogen-containing gas and a second heat-treatment step for thermally treating the monitor wafer in an atmosphere of a hydrogen-chloride-containing gas and the hydrogen-containing gas.

Contamination control method of vapor deposition apparatus and method of producing epitaxial silicon wafer

A semiconductor substrate is provided in which an alignment mark is formed that can be used for an alignment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N-type layer formed on an N-type substrate. This trench is used to leave voids after the formation of a P-type epitaxial film on the N-type layer. Then, the voids formed in the N-type layer can be used as an alignment mark. Thus, such a semiconductor substrate can be used to provide an alignment in the subsequent step of manufacturing the semiconductor apparatus. Thus, the respective components constituting the semiconductor apparatus can be formed at desired positions accurately.

Method for manufacturing semiconductor substrate

A semiconductor substrate is provided in which an alignment mark is formed that can be used for an alignment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N-type substrate. This trench is used to leave voids after the formation of an N-type layer. Then, the voids formed in the N-type substrate can be used as an alignment mark. Thus, such a semiconductor substrate can be used to provide an alignment in the subsequent step of manufacturing the semiconductor apparatus. Thus, the respective components constituting the semiconductor apparatus can be formed at desired positions accurately.

A semiconductor substrate which allows desired electrical characteristics to be more easily acquired, a semiconductor device of the same, and a method of producing the semiconductor substrate. The method of producing this semiconductor substrate is provided with: a first epitaxial layer forming step (S) of forming a first epitaxial layer; a trench forming step (S) of forming trenches in the first epitaxial layer; and epitaxial layer forming steps (S, S, S) of forming epitaxial layers on the first epitaxial layer and inside the trenches, using a plurality of growth conditions including differing growth rates, so as to fill the trenches, and keeping the concentration of dopant taken into the epitaxial layers constant in the plurality of growth conditions.

Semiconductor substrate, semiconductor device, and method of producing semiconductor substrate

A method for manufacturing a semiconductor device includes the steps of: forming a trench in a semiconductor substrate; and forming an epitaxial film on the substrate including a sidewall and a bottom of the trench so that the epitaxial film is filled in the trench. The step of forming the epitaxial film includes a final step before the trench is filled with the epitaxial film. The final step has a forming condition of the epitaxial film in such a manner that the epitaxial film to be formed on the sidewall of the trench has a growth rate at an opening of the trench smaller than a growth rate at a position of the trench, which is deeper than the opening of the trench.

Method for manufacturing semiconductor device

A semiconductor device is provided, which includes a substrate; a P-N column layer disposed on the substrate; a second conductivity type epitaxial layer disposed on the P-N column layer. The P-N column layer includes first conductivity type columns and second conductivity type columns, which are alternately arranged. Each column has a tapered shape. A portion of the first conductivity type column located around the substrate has a smaller impurity concentration than another portion of the first conductivity type column located around the second conductivity type epitaxial layer. A portion of the second conductivity type column located around the substrate has a larger impurity concentration than another portion of the first conductivity type column located around the second conductivity type epitaxial layer.

Semiconductor device having P-N column layer and method for manufacturing the same

A method for manufacturing a semiconductor device includes steps of: forming a trench on a main surface of a silicon substrate; forming a first epitaxial film on the main surface and in the trench; and forming a second epitaxial film on the first epitaxial film. The step of forming the first epitaxial film has a first process condition with a first growth rate of the first epitaxial film. The step of forming the second epitaxial film has a second process condition with a second growth rate of the second epitaxial film. The second growth rate is larger than the first growth rate.

Method for manufacturing semiconductor device and epitaxial growth equipment

A resistivity of an epitaxial layer in a trench is changed in a stepwise manner by reducing a quantity of an impurity diffused into the epitaxial layer in the trench from a semiconductor wafer in a stepwise manner, thereby suppressing an influence of auto-doping from the semiconductor wafer. An epitaxial layeris grown in a trenchof a semiconductor waferhaving a trench structure by gradually reducing a temperature in a temperature in the range of 400 to 1150&#xb0; C. by a vapor growth method while supplying a silane gas as a raw material gas, thereby filling the epitaxial layerin the trench

Manufacturing method of semiconductor wafer having a trench structure and epitaxial layer

A method for manufacturing a semiconductor device includes steps of: forming a first epitaxial film on a silicon substrate; forming a trench in the first epitaxial film; and forming a second epitaxial film on the first epitaxial film and in the trench. The step of forming the second epitaxial film includes a final step, in which a mixed gas of a silicon source gas and a halide gas is used. The silicon substrate has an arsenic concentration defined as &#x3b1;. The second epitaxial film has an impurity concentration defined as &#x3b2;. The arsenic concentration and the impurity concentration has a relationship of: &#x3b1;&#x2266;3&#xd7;10&#xd7;ln(&#x3b2;)&#x2212;1&#xd7;10.

Semiconductor device, method for manufacturing the same and method for evaluating the same

Closure at the opening of a trench with an epitaxial film is restrained, and thereby, filling morphology in the trenches is improved. A method for manufacturing a semiconductor substrate includes a step for growing an epitaxial layeron the surface of a silicon substrate, a step of forming a trenchin this epitaxial layer, and a step of filling the inside of the trenchwith the epitaxial film, wherein mixed gas made by mixing halogenoid gas into silicon source gas is circulated as material gas in filling the inside of the trench with the epitaxial film, and when the standard flow rate of the halogenoid gas is defined as Xslm and the film formation speed of the epitaxial film formed by the circulation of the silicon source gas is defined as Y&#x3bc;m/min, in the case when the aspect ratio of the trench is less than 10, an expression Y&#x3c;0.2X+0.10 is satisfied, and in the case that the aspect ratio of the trench is between 10 and less than 20, an expression Y&#x3c;0.2X+0.05 is satisfied, and in the case that the aspect ratio of the trench is 20 or more, an expression Y&#x3c;0.2X is satisfied.

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Tokyo, Japan

Syouji Nogami