National Research Council of Canada

Sylvie Morin

David John Lockwood

Rabah Boukherroub

Danial D M Wayner

A method is disclosed for stabilizing porous silicon. A porous silicon structure having a surface terminated with hydrogen atoms is subjected to organic thermal processing to substitute the hydrogen atoms with a protective organic layer. The resulting structures are found to have unprecedented stability.

Passivation of porous semiconductors

A method is disclosed for stabilizing porous silicon. A porous silicon structure having a surface terminated with hydrogen atoms is subjected to organic thermal processing to substitute the hydrogen atoms with a protective organic layer. The resulting structure are found to have unprecedented stability.

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Toronto, Canada

Sylvie Morin