Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Scintil Photonics

Alcatel Lucent

Sylvie Menezo

Salim Boutami

Olivier Girard

Olivier Dubray

Karim Hassan

Bruno Mourey

Rami Khazaka

Torrey Lane Thiessen

Giovanni Beninca De Farias

Georgio El Zammar

Jean-Marc Fedeli

Frank Fournel

Badhise Ben Bakir

Christophe Kopp

Vincent Reboud

Bertrand Szelag

Philippe Grosse

Joyce Kai See Poon

Corrado Sciancalepore

Laurent Fulbert

Haykel Ben Jamaa

Stéphane Bernabe

Séverine Cheramy

Severine Cheramy

Benjamin Blampey

Gilles Poupon

Joyce Poon

Frédéric Mazur

Torrey Thiessen

Florian Enault

Giovanni Benica De Farias

A photonic device comprises: —a support layer, —an optical layer extending in a main plane (x, y), subdivided into at least a first region and a second region adjacent in the main plane (x, y), and comprising a first optical waveguide in the first region and a second optical waveguide in the second region, —a stack of III-V semiconductor compounds, arranged on a dielectric layer, in the first region, —an intermediate layer, between the optical layer and the support layer, comprising a thermally conductive material forming a single-piece block, arranged in line with the first region and an optical and/or electrical cladding material arranged in line with the second region. A method is employed for manufacturing such a device.

Photonic device with improved heat dissipation for III-V/Si heterogeneous laser and associated manufacturing method

A laser device includes a III-V heterostructure amplifying medium; a silicon optical waveguide having a coupling section facing a central portion of the amplifying medium, a propagation section and a first transition section between the coupling section and the propagation section; and a first and a second reflective structure allowing a Fabry-Perot type resonant cavity to be formed between them for the amplifying medium. The coupling section includes a refractive index disruption region provided with micro-reflectors designed to reduce the thickness and/or width of the coupling section. The first reflective structure is formed in a section of the waveguide with a first thickness. The second reflective structure is formed in a section of the waveguide, which has the first thickness and which is separated from the coupling section by a second transition section of the waveguide, the second transition section having a second thickness greater than the first thickness.

Single-mode hybrid III-V on silicon laser of simplified construction

A photonic chip includes an optical layer bonded, via a bonding interface, to a carrier, and a laser source having a waveguide encapsulated in an encapsulating sublayer of the optical layer, the waveguide having a first electrical contact embedded in the encapsulating sublayer. The photonic chip also includes an interconnect metal network forming a via that extends, in the optical layer, from the bonding interface to the first embedded electrical contact of the waveguide, the interconnect metal network having metal vias that electrically connect to one another metals lines that extend mainly parallel to the plane of the chip, the metal lines being arranged one above the other within the optical layer.

Photonic chip with buried laser source

A photonic assembly comprises: a photonic device comprising an output guide and an input guide cooperating with, respectively, a first output and a first input; a photonic element having a second output and a second input optically coupled to the first input and the first output; an optical isolator interposed in a first path between the first output and the second input, and imposing a first size on radiation propagating along the first path; and adjustment means interposed in a second path between the first input and the second output, the adjustment means being configured to impose on radiation propagating along the second path a second size equal to the first size.

Photonic assembly comprising a photonic component optically coupled with a photonic element

Optical beam forming at the inputs/outputs of a photonic chip and to the spectral broadening of the light coupled to the chip. The photonic chip comprises an optical waveguide layer supported on a substrate. The chip includes an optical waveguide structure made of silicon and a coupling surface grating. The photonic chip has a front face on the side facing the coupling surface grating and a rear face on the side facing the substrate. A reflecting collimation structure is integrated in the rear face to modify the mode size of an incident light beam. The coupling surface grating is designed to receive light from the optical waveguide structure and to form a light beam directed to the reflecting collimation structure. The invention further relates to the method for producing such a chip.

Photonic chip with integrated collimation structure

A hybrid semiconductor laser component comprising at least one first emitting module comprising an active zone shaped to emit electromagnetic radiation at a given wavelength; and an optical layer comprising at least one first waveguide optically coupled with the active zone, the waveguide forming with the active zone an optical cavity resonating at the given wavelength. The hybrid semiconductor laser component also comprises a heat-dissipating semiconductor layer, the heat-dissipating semiconductor layer being in thermal contact with the first emitting module on a surface of the first emitting module that is opposite the optical layer. The invention also relates to a method for manufacturing such a hybrid semiconductor laser component.

Hybrid semiconductor laser component and method for manufacturing such a component

The invention relates to a process for fabricating a photonic chip including steps of transferring a die to an actual transfer region of the receiving substrate comprising a central region entirely covered by the die and a peripheral region having a free surface, a first waveguide lying solely in the central region, and a second waveguide lying in the peripheral region; depositing an etch mask on a segment of the die and around the actual transfer region; and dry etching a free segment of the die, the free surface of the peripheral region then being partially etched.

Process for fabricating a photonic chip via transfer of a die to a receiving substrate

A photonic chip includes an optical layer bonded, at a bonding interface, to an interconnection layer, the thickness of the optical layer being smaller than 15 &#x3bc;m, a primary via that extends through the interconnection layer solely between a lower face and the bonding interface, an electrical terminal chosen from the group consisting of an electrical contact embedded in the interior of the optical layer and of an electrical track produced on an upper face, a second via that extends the primary via into the interior of the optical layer in order to electrically connect the primary via to the electrical terminal, this secondary via extending in the interior of the optical layer from the bonding interface to the electrical terminal, the maximum diameter of this secondary via being smaller than 3 &#x3bc;m.

Photonic chip passed through by a via

This method of fabricating a modulator comprises:

Method of fabricating a modulator of the propagation losses and of the index of propagation of an optical signal

A light source comprises a GeSn active zone inserted between two contact zones. The active zone is formed directly on a silicon oxide layer by a first lateral epitaxial growth of a Ge germination layer followed by a second lateral epitaxial growth of a GeSn base layer. A cavity is formed between the contact zones by encapsulation and etching, so as to guide these lateral growths. A vertical growth of GeSn is then achieved from the base layer to form a structural layer. The active zone is formed in the stack of base and structural layers.

Method for producing a light source and light source

A method is provided for producing, on a wafer-scale, a plurality of optoelectronic chips, including: providing a receiver substrate including a plurality of elementary zones, each being configured to contain one optoelectronic chip, and each including at least one coupling waveguide integrated into the receiver substrate and configured to be optically coupled to a first optoelectronic component; transferring a plurality of pads to the elementary zones such that the pads partially cover the at least one coupling waveguide; and producing the first optoelectronic component from the pads such that each first optoelectronic component is facing the at least one coupling waveguide of a corresponding elementary zone, and, following the transferring step, each pad of the plurality of pads extends over a set of at least two adjacent elementary zones, so as to partially cover the at least one coupling waveguide of each of the adjacent elementary zones.

Method for the collective production of a plurality of optoelectronic chips

A method of fabricating a modulator of propagation losses and of index of propagation of an optical signal, including: following bonding of a substrate onto an encapsulated semiconductor layer including a first electrode of the modulator and prior to forming a second electrode of the modulator, the method includes: removing a base substrate onto which the encapsulated semiconductor layer is deposited to expose a face of a buried layer of dielectric material, situated under the buried semiconductor layer, without modifying thickness of the buried layer by more than 5 nm; and forming the second electrode is implemented directly on this exposed face of the buried layer such that, once the second electrode has been formed, it is the buried layer which directly forms a dielectric layer interposed between proximal ends of the electrodes of the modulator.

The present disclosure relates to shaping of optic beams at the inputs/outputs of a photonic chip, the spectral widening of the light coupled to this chip, and a method for manufacturing the chip. The photonic chip includes a light guiding layer supported by a substrate. The chip includes at least one light guiding structure made of silicon coupled on one side to a vertical coupler and on another side to an optical component integrated in the light guiding layer. The photonic chip has a front face on the vertical coupler side and a rear face on the substrate side. A collimation structure of digital lens type is integrated at the level of the rear face to collimate the mode size of the light beam incident on the lens and coming from the vertical coupler.

The subject matter of the invention is a method for producing a lateral photodiode comprising a layer surmounted by a first pattern comprising an absorption region interposed between two contact regions. After encapsulation of the first pattern, a cavity is formed between the contact regions by etching through openings, and then filled with a material constituting the absorption region by lateral epitaxy of this material from the lateral walls of the cavity. According to one possibility, a first lateral epitaxy is effected in order to form a multiplication region, and then a second lateral epitaxy is effected in order to form a charge region before the lateral epitaxy of the material constituting the absorption region, so as to obtain a lateral avalanche photodiode having improved optical confinement. The lateral photodiode according to the invention has improved optical confinement.

Method for producing a photodiode and photodiode

A photonic device comprising: a support; an intermediate layer comprising at least one dielectric material and a first and second excess thickness of silicon separated from each other by a space; a first patterned silicon layer at least partially forming a waveguide, and first to fifth waveguide sections; a first dielectric layer covering the first silicon layer and a gain structure comprising at least one gain medium in contact with the first dielectric layer; the second and fourth wave guide sections, the first and second excess thicknesses of silicon, and the first and second ends of the gain structure forming a first and second optical transition zone between a hybrid laser waveguide, formed by a central portion of the gain structure, the space and the third waveguide section and the first and fifth waveguide sections respectively. The invention also relates to a method of fabricating such a photonic device.

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Voiron, France

Sylvie Menezo