Aledia

Centre National De La Recherche Scientifique

Sylvia Scaringella

Philippe Gibert

Philippe Gilet

Xavier Hugon

Benoît Amstatt

Jesus Zuniga-Perez

Ivan-Christophe Robin

Ying-Lan Chang

Frédéric Mayer

Erwan Dornel

Tiphaine Dupont

Eric Pourquier

Abdelhay Aboulaich

Fabienne Goutaudier

Maxime Boistard

Clémence Tallet

Christophe Lincheneau

Eleonora Garoni

A method of manufacturing an optoelectronic device including assemblies of light-emitting diodes (LED) having first and second assemblies and first blocks made of a first photoluminescent material, each covering one of the first assemblies. The method includes the forming of a layer covering the first and second assemblies, the delimiting of first openings in the layer to expose the first assemblies, the filling of the first openings with the first material, and the performing of a chemical-mechanical polishing to delimit the first blocks.

Method for producing an optoelectronic device

An optoelectronic device including a support, at least hydrophilic photoluminescent blocks including hydrophilic photoluminescent particles covering first areas of the support and hydrophobic photoluminescent blocks including hydrophobic photoluminescent particles covering second areas of the support, the hydrophilic photoluminescent blocks being in contact with a hydrophilic material in the first areas and the hydrophobic photoluminescent blocks being in contact with a hydrophobic material in the second areas.

Optoelectronic device comprising an array of photoluminescent blocks and method for the production of same

An emitting device comprising a first light emitter adapted to emit a first radiation, and a second light emitter adapted to emit a second radiation different from the first radiation, the first light emitter comprising a first semiconducting structure and a first radiation converter, the second light emitter comprising a second semiconducting structure and a second radiation converter, each semiconducting structure comprising a semiconducting layer adapted to emit a third radiation, each radiation converter comprising a set of particles able to convert the third radiation into the first or second radiation, the particles of the first radiation converter being attached to a surface by a bulk of photosensitive resin and the particles of the second radiation converter being attached to a surface by grafting.

Emitting devices, associated display screen and methods for fabricating an emitting device

An optoelectronic device including a substrate including first and second opposite surfaces and lateral electrical insulation elements extending in the substrate and delimiting first electrically-insulated semiconductor or conductive portions. The optoelectronic device includes, for each first portion, an assembly of light-emitting diodes electrically coupled to the first portion. The optoelectronic device includes an electrode layer covering all the light-emitting diodes, a protection layer covering the electrode layer, and walls extending in the protection layer and delimiting second portions surrounding or opposite the assemblies of light-emitting diodes. The walls contain at least one material from the group including air, a metal, a semiconductor material, a metal alloy, a partially transparent material, and a core made of an at least partially transparent material covered with an opaque or reflective layer.

Optoelectronic device comprising pixels with improved contrast and brightness

An optoelectronic device including first and second active regions suitable for emitting or detecting electromagnetic radiation and containing a first semiconductor material that predominantly contains a first compound selected from Compounds III-V, Compounds II-VI, and mixtures of same. The first active regions have a first polarity, and the second active regions have a second polarity different from the first polarity.

Optoelectronic device and method for manufacturing same

A light-emitting device comprises a set of nanowires over the whole surface of a substrate, comprising at least a first series of first nanowires and a second series of second nanowires; the first series comprising first nanowires emitting light under electrical control, connected between a first and a second type of electrical contact to emit light under electrical control, the first nanowires covered by at least one conducting layer transparent at the wavelength of the light-emitting device, layer in contact with the first type of electrical contact; the second series comprising second nanowires, encapsulated in a layer of metal allowing the first electrical contact to be formed; the second electrical contact being on the back face of the substrate, opposite to the face comprising the nanowires, and provided by a conducting layer facing the first series of nanowires. A method of fabrication of the light-emitting device is provided.

Light-emitting device comprising active nanowires and contact nanowires and method of fabrication

An optoelectronic device including first, and second active regions suitable for emitting or detecting electromagnetic radiation and containing a first semiconductor material that predominantly contains a first compound selected from Compounds III-V, Compounds II-VI, and mixtures of same. The first active regions have a first polarity, and the second active regions have a second polarity different from the first polarity.

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Eybens, France

Sylvia Scaringella