Texas Instruments Corporation

Sylvia D Pas

Michael Francis Pas

C Rinn Cleavelin

An orthotic device comprises a flexible support structure comprising at least one surface for contacting a body part of a user, a plurality of pressure sensors configured for coupling to a microcontroller, and a plurality of displacement regions. Each region defines a portion of said flexible support structure, wherein each portion includes at least one sensor disposed on or below the at least one surface and at least one electrically deformable unit. Each unit comprises at least one electroactive material and is configured for coupling to the microcontroller and to a power source. The device is dynamically adjustable to change its shape and support properties, when an electrical voltage is applied to the electroactive material under the control of a microcontroller.

Dynamically adjustable orthotic device

The formation of a lithographic mask () is disclosed, where the mask () can be used in forming integrated circuits onto a semiconductor substrate. A layer of etch stop material () is sandwiched between first () and second () layers of transmissive material that are substantially transparent to lithographic light. The layer of etch stop material () serves as an etch stop when a circuit pattern is etched into the second layer of transmissive material (). This allows the second layer of etch stop material () to be etched to a more precise depth thereby providing a desired phase shift and concurrently controlling critical dimension width.

Composite phase shifting lithography mask including etch stop layer

A method for fabricating a phase shift photomask ( ) includes providing a photomask ( ) having a substantially opaque layer ( ) on a surface ( ) of a substantially transparent substrate ( ). The opaque layer ( ) includes a removed portion to define a light transmitting pattern ( ) of the photomask ( ). The method also includes depositing an implant ( ) in a portion of the substrate ( ). The implanted portion ( ) of the substrate ( ) includes an etch rate different than an etch rate of an unimplanted portion ( ) of the substrate ( ). The method includes initiating an etch of the substrate ( ) corresponding to the light transmitting pattern ( ) and monitoring a rate of the etch. The method further includes terminating the etch in response to detecting a change in the rate of the etch.

Method for manufacturing a phase shift photomask

One embodiment of the instant invention is a process chamber for heating a semiconductor wafer, the process chamber comprising: heating elements (elements 104 of FIG. 2a) for providing heating energy; means for holding (means 112 of FIG. 2a) the semiconductor wafer; and shutters situated between the heating elements and the means for holding the semiconductor wafer, the shutters (shutters 108 of FIGS. 2a and 2b and shutters of FIGS. 2c and 2d for blocking the heating energy from getting to the semiconductor wafer when the shutters are in a closed position and for directing the heating energy to the semiconductor wafer when in an open position. Preferably, the shutters are comprised of: an outer surface which is coated with a material which reflects the heating energy back towards the heating elements when the shutters are in the closed position; an inner surface which faces the means for holding the semiconductor wafer when the shutters are in the dosed position; an axis which the shutters revolve around so as to open and close; and an insulating material situated between the inner and outer surfaces.

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Richardson, TX, United States of America

Sylvia D Pas