Commissariat a L'energie Atomique

Societe Francaise De Detecteurs Infrarouges-sofradir

Sylvain Paltrier

Bernard Schaub

Jean Gallet

Alain Fillot

Philippe Pantigny

Jean-Luc Martin

R&eacute;gis Hamelin

Thierry Miguet

A method for producing the growth of a semiconductor material, in particular of type II-VI, uses a melt of the semiconductor placed in a sealed bulb under vacuum or under controlled atmosphere, the bulb being subjected to a sufficient temperature gradient for first maintaining the melt in the liquid state, then causing its progressive crystallization from the surface towards the bottom. The method further comprises an element capable of floating on the surface of the melt, and equipped with a substantially central bore, intended for receiving a seed crystal for permitting the nucleation leading to the preparation of a seed crystal, and also supporting the seed crystal above the melt while maintaining it in contact with the melt in order to permit the continued crystallization from the seed crystal by lowering the temperature gradient.

Method for producing the growth of a semiconductor material

A method for producing a crystallized compound semiconductor material comprises synthesizing said material by fusion and inter-reaction of its constituents placed in elementary form constituting a charge into a sealed ampoule, and then crystallizing the resulting material in liquid form by cooling. Also including: increasing, within the charge, proportion of one constituent beyond the stoichiometric proportions of the material, thereby defining an excess of the one constituent; subjecting the entire sealed ampoule to a temperature higher than or equal to fusion temperature of the material; subjecting the ampoule to a low temperature gradient and to a gradual drop in temperature, to induce crystallization of the resulting material in liquid form, in stoichiometric proportion; subjecting part of the ampoule where the crystallized material is not present, to a significant drop in temperature modifying vapor pressure state of the excess to a saturated vapor state; and cooling the whole assembly down to ambient temperature.

Method for producing a crystallized semiconductor material

An image sensor comprises a detector circuit ( ) with detector diodes ( ), which are reverse biased during image sensing. It is characterized in that the cathode voltage of the detector diodes is controlled by forward biasing detector circuit ( ) diodes via the read circuit ( ). The control diodes can be dedicated diodes or forward biased photodetector diodes. In the latter case, a picture is taken in several sequences.

Method of biasing the photodiodes of a matrix sensor through associated pixels thereof

The invention relates to a process for the preparation of a binary initial solvent zone for the crystallization in monocrystal form of a ternary or quaternary compound of given composition and containing Cd and Hg. It consists of choosing on the phase equilibrium diagram of the compound, the Cd and Hg concentration and the temperature which crystallization is to take place. When raised to this temperature, the initial solvent zone is able to dissolve the compound until a solvent zone in thermodynamic equilibrium therewith is obtained and on the basis of which it is possible to bring about crystallization. The composition of the initial solvent zone and the temperature at which it is to be prepared are determined on the diagram.

Process for producing a monocrystal of a compound by crystallizing a

Process for the preparation of a polycrystalline alloy for producing monocrystals by passage in a solvent zone. The compound is completely melted by heating it to a temperature above its melting point and for a time sufficient for the homogenization of the liquid. This is followed by a cooling of the liquid by bringing it to a temperature below the melting point thereof. The sudden rise of the temperature occurring at the end of the superfusion of the liquid is monitored and the mixture then undergoes sudden tempering bringing about the instantaneous solidification of the entity in the form of a homogeneous polycrystalline ingot.

Process for producing a polycrystalline alloy

Process for producing ternary or quaternary semiconductor compounds, particularly of formula Cd Hg Te or Cd Hg Te Se.

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Voreppe, France

Sylvain Paltrier