Csem Centre Suisse D'electronique Et De Microtechnique Sa&#x2014;recherche Et D&#xe9;veloppement

Csem Centre Suisse D'electronique Et De Microtechnique Sa

Sylvain Nicolay

Andrea Ingenito

Arnaud Walter

Disclosed is a photovoltaic device including: —a silicon substrate; —a first tunnel layer situated upon at least a first side of the silicon substrate; —a first polycrystalline silicon-based capping layer situated upon the first tunnel layer; and —a second tunnel layer situated upon substantially the entirety of the first polycrystalline silicon-based capping layer. The photovoltaic device further includes: —a second polycrystalline silicon-based capping layer situated upon predetermined zones of the second tunnel layer, areas of the second tunnel layer situated outside of the predetermined zones being free of the second polycrystalline silicon-based capping layer; and —a metal contact situated upon at least part of the second polycrystalline silicon-based capping layer.

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Portalban, Switzerland

Sylvain Nicolay