Centre National De La Recherche Scientifique

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat a L'energie Atomique

Université Paris-Sud 11

Université Paris Sud Xi

Sylvain Franger

Frédéric Le Cras

Carole Bourbon

Alexandre Moradpour

Olivier Schneegans

Alexandre Revcolevschi

Sébastien Martinet

Raphaël Salot

Hélène Porthault

Oana Georgiana Dragos

Nita Dragoe

Loreynne Pinsard-Gaudart

The method for producing a stack of films provided with at least one 3D-structured pattern including providing a first mold having a textured front face including a first 3D pattern, depositing a first layer of the stack on the textured front face so as to cover the first 3D pattern by a continuous layer, the first layer having a first face in contact with the front face of the mold, removing the first mold so as to release the first face of the first layer having a second 3D pattern complementary to the first 3D pattern and depositing a second layer of the stack on the first face of the first layer so as to cover the second 3D pattern by a continuous layer.

Method for producing 3D-structured thin films

The invention relates to a memristive element (M) formed by: a first electrode (); a second electrode (); and an active region () making direct electrical contact with said first and second electrodes, characterized in that said active region essentially consists of a thin film of an insertion compound containing at least one alkali metal, said compound being an oxide or chalcogenide of at least one transition metal and being able to conduct both electrons and ions. Non-volatile electronic memory formed from a plurality of such memristive elements.

Memristive element and electronic memory based on such elements

Process for the preparation of an insertion compound of an alkali metal in which the following successive stages are carried out:

Method for preparing insertion compounds of an alkali metal, active materials containing same, and devices comprising said active materials

A device for mass storage of information, the device comprising: a substrate (); an electrically-conductive tip () for atomic force microscopy located above the surface () of said substrate () in electrical contact therewith; and a voltage generator () for applying a potential difference between said tip () and said substrate (); the device being characterized in that: said substrate () has a surface () of a material presenting electrical conductivity that is both electronic and ionic in nature; and in that said generator () is adapted to apply a potential difference that is sufficient to induce a redox reaction of said material that modifies the surface electrical conductivity of the substrate (). The use of such a device () for mass storage of information.

Device and method for information mass storage

Lithium insertion compound having the following formula (I):LiMM1M2M3M4M5B(XOZ)&#x2003;&#x2003;(I) preferably,  Methods for preparing these compounds. Active materials of electrodes, in particular of positive electrodes containing said compounds, and batteries and electrochromic devices using these compounds.

Boron-substituted lithium compounds, active electrode materials, batteries and electrochrome devices

Growing community of inventors

Gif-sur-Yvette, France

Sylvain Franger