Stmicroelectronics (crolles 2) Sas

Stmicroelectronics S.a.

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Centre National De La Recherche Scientifique

Stmicroelectronics Gmbh

Stmicroelectronics (rousset) Sas

Sylvain Clerc

Philippe Roche

Fady Abouzeid

Gilles Gasiot

Bastien Giraud

Jean-Philippe Noel

Yvain Thonnart

Francois Jacquet

Maximilien Glorieux

Fabian Firmin

Jean-Pierre Schoellkopf

Thomas David Zounes

Jean-Marc Daveau

Alain Artieri

Victor Malherbe

Martin Cochet

Ricardo Gomez Gomez

Françoise Jacquet

Phillippe Roche

Benoît Lasbouygues

A method tests at least three devices, each device including a test chain having a plurality of positions storing test data. The testing includes comparing test data in a last position of the test chain of each of the devices, and shifting test data in the test chains of each of the devices and storing a result of the comparison in a first position of the test chains of each of the devices. The comparing and the shifting and storing are repeated until all the stored test data has been compared. The at least three devices may have a same functionality and a same structure.

Device, method and system of error detection and correction in multiple devices

A chain of flip-flops is tested by passing a reference signal through the chain. The reference signal is generated from a test pattern that is cyclically fed back at the cadence of a clock signal. The reference signal propagates through the chain of flip-flops at the cadence of the clock signal to output a test signal. A comparison is carried out at the cadence of the clock signal of the test signal and the reference signal, where the reference signal is delayed by a delay time taking into account the number of flip-flops in the chain and the length of the test pattern. An output signal is produced, at the cadence of the clock signal, as a result of the comparison.

Method and device for testing a chain of flip-flops

A device for monitoring a critical path of an integrated circuit includes a replica of the critical path formed by sequential elements mutually separated by delay circuits that are programmable though a corresponding main multiplexer. A control circuit controls delay selections made by each main multiplexer. A sequencing module operates to sequence each sequential element using a main clock signal by delivering, in response to a main clock signal, respectively to the sequential elements, secondary clock signals that are mutually time shifted in such a manner as to take into account the propagation time inherent to the main multiplexer.

Method and device for monitoring a critical path of an integrated circuit

A radiation-hardened logic device includes a first n-channel transistor coupled by its main conducting nodes between an output node of a logic device and a supply voltage rail and a first p-channel transistor coupled by its main conducting nodes between the output node of the logic device and a ground voltage rail. The gates of the first n-channel and p-channel transistors are coupled to the output node.

Radiation-hardened CMOS logic device

A pulse signal generator has an input receiving an initial pulse signal having an initial period, an oscillator generating an oscillator signal, a first stage and a second stage. The first stage is synchronized with the oscillator signal and configured to deliver a secondary pulse signal having a separation between successive pulses that is representative of an integer part of a division of the initial period by an integer N. The first stage further delivers an auxiliary signal representative of a fractional part of the division and containing, for each pulse of the secondary pulse signal, an indication of a time shift to be applied to the pulse taking into account the separation. The second stage is configured to receive the successive pulses and the corresponding time shift indications and generate successive corresponding pulses of an output pulse signal.

Device for generating a clock signal by frequency multiplication

A method for controlling an IC having logic cells and a clock-tree cell. Each logic cell has first and second FETs, which are pMOS and nMOS respectively. The clock-tree cell includes third and fourth FETs, which are pMOS and nMOS respectively. The clock-tree cell provides a clock signal to the logic cells. A back gate potential difference ('BGPD') of a pMOS-FET is a difference between its source potential less its back-gate potential, and vice versa for an nMOS-FET. The method includes applying first and second back gate potential difference (BGPD) to a logic cell's first and second FETs and either applying a third BGPD to a third FET, wherein the third BGPD is positive and greater than the first BGPD applied, which is applied concurrently, or applying a fourth BGEPD to a fourth FET, wherein the fourth BGPD is positive and greater than the second BGPD that is applied concurrently.

Method for controlling an integrated circuit

A method for managing operation of a logic component is provided, with the logic component including a majority vote circuit and an odd number of flip-flops equal to at least three. The method includes, following a normal operating mode of the logic component, placing a flip-flop in a test mode, and injecting a test signal into a test input of the flip-flop being tested while a logic state of the other flip-flops is frozen. A test signal output is analyzed. At the end of the test, the logic component is placed back in the normal operating mode. The majority vote circuit restores a value of the output signal from the logic component that existed prior to initiation of the test.

Method for managing the operation of a circuit with triple modular redundancy and associated device

An integrated with a block including first and second oppositely doped semiconductor wells. There are standard cells placed next to one another, each standard cell including first transistors and a clock tree cell encircled by standard cells. The clock tree cell has a third semiconductor well with the same doping type as the doping of the first well and second transistors. The clock tree cell also has a semiconductor strip extending continuously around the third well and having the opposite doping type to the doping of the third well to electrically isolate the third well from the first well.

Integrated circuit comprising a clock tree cell

The invention relates to an integrated circuit comprising: The integrated circuit comprises an electrical power supply network () able to apply separate electrical biases directly to the first and second ground planes.

A device and a method for controlling an SRAM-type device, including: a bistable circuit and two switching circuits respectively connecting two access terminals of the bistable circuit to two complementary bit lines in a first direction, each switching circuit including a first switch and a second switch in series between one of the bit lines and one of the access terminals, the control terminal of the second switch being connected to a word control line in the first direction; and a third switch between the midpoint of the series connection and a terminal of application of a reference potential, a control terminal of the third switch being connected to the other one of the access terminals.

SRAM read-write memory cell having ten transistors

A memory device includes first and second inverters cross-coupled between first and second nodes. The first inverter is configured to be supplied by a first supply voltage via a first transistor and the second inverter is configured to be supplied by the first supply voltage via a second transistor. A first control circuit is configured to control a gate node of the first transistor based on the voltage at the second node and at a gate node of the second transistor. A second control circuit is configured to control the gate node of the second transistor based on the voltage at the first node and at the gate node of the first transistor.

Memory device

A method for protecting an electronic circuit having at least one output against external radiation includes functionally duplicating the electronic circuit and linking the outputs of the electronic circuit and the duplicated electronic circuit to homologous inputs of at least functionally equivalent combinatorial or sequential elements. The homologous outputs of all the combinatorial or sequential elements are linked together. The electronic circuit can be duplicated multiple times.

Method for protecting a logic circuit against external radiation and associated electronic device

A read boost circuit arranged to boost the voltage difference between a pair of complementary bit lines of a memory device during a read operation, the read boost circuit including: a first transistor adapted to be controlled by the voltage level on a first bit line of the pair of bit lines to couple a second bit line of the pair of bit lines to a first supply voltage; and a second transistor connected directly to ground and adapted to be controlled by the voltage level on the second bit line to couple the first bit line to ground.

Read boost circuit for memory device

The present invention relates to an integrated electronic circuit including elements enabling to implement a logic function and means for attenuating the sensitivity of said elements to external disturbances, said attenuation means being disconnectable during phases of intentional modification of the state of said elements.

Growing community of inventors

Grenoble, France

Sylvain Clerc