National Research Council of Canada

Enablence Inc.

Sylvain Charbonneau

Emil S Koteles

Siegfried Janz

Dan-Xia Xu

Pavel Cheben

Philip J Poole

Boris Lamontagne

Lynden Erickson

Andre Delage

Matt Pearson

Michael Davies

John Miller

Kokou Dossou

Geofrey C Aers

Jian Jun He

An Echelle grating has alternate first () and second () sets of facets (). The first set of facets () is operative to reflect incident light () for diffraction and the second set of facets () extends between adjacent facets of the first set (). Only the first set of facets () is metallized to enhance reflection. The second set of facets () is left unmetallized. This configuration reduces polarization dependent loss (PDL).

Echelle gratings with low Polarization Dependent Loss (PDL) using metal coating on the reflecting facets only

An optical performance monitor for measuring the performance of optical networks has an echelle grating for demultiplexing an input beam into a plurality of wavelengths that are focused onto an array of divided output waveguides. Each divided output waveguide is positioned to receive a corresponding demultiplexed wavelength from the echelle grating or other waveguide multiplexer device. The divided output waveguides laterally separate the corresponding demultiplexed wavelength into a first and second portions. A detector array is positioned to receive the respective portions of the demultiplexed wavelengths and by comparing their relative intensity it is possible to detect any drift in the nominal wavelengths of the channels.

Optical performance monitor

Bandgap tuning of semiconductor well structure

An active semiconductor device that performs in a substantially polarization independent manner. A quantum well waveguide is intermixed by intermixing atoms across an interface between well and barrier layers. The atoms include at least 2 groups wherein intermixing of one group is at a substantially greater rate than another group. Cations are interdiffused at a greater rate than said anions across interfaces between well and barrier layers. The intermixing must be sufficient to provide strain within layers of the waveguide and sufficient to at least partially degenerate light hole and heavy hole bands of the structure. Preferably intermixing is sufficient to completely degenerate light hole and heavy hold bands to essentially produce a device that is completely polarization independent.

Fabrication of quantum well polarization independent active devices

A method of selectively tuning the bandedge of a semiconductor heterostructure includes repeatedly forming a disordered region that is spatially separated from a quantum well active region and subsequently annealing the heterostructure each time after the disordered region is formed, so that vacancies/defects in the disordered region diffuse into the quantum well region and enhance interdiffusion at the well-barrier heterojunctions. Repeating, the disordering followed by annealing allows for a greater range in bandgap tuning. The heterostuctures of interest are IH-V material systems, such as AlGaAs/GaAs, where the active region includes structures such as a single quantum well, a multiple quantum well, or a superlattice.

Method of bandgap tuning of semiconductor quantum well structures

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Cumberland, Canada

Sylvain Charbonneau