Soitec

Centre National De La Recherche Scientifique

Compagnie Generale Des Etablissements Michelin

Michelin Recherche Et Technique S.a.

Université De Franche Comte

Etat Francais Represente Par Le Delegue General Pour L'armement

Senseor

Frec'n'sys

Sylvain Ballandras

Viktor Plesski

Thierry LaRoche

Julien Garcia

Emilie Courjon

Luc Chommeloux

Florent Bernard

Eric Michoulier

Alexandre Raveski

William Daniau

Roger Petit

Sébastien Alzuaga

Emilie Courjou

Bruno Francois

Jérémy Masson

Bernard Dulmet

Mihaela Ivan

Lionel Fagot-Revurat

An acoustic wave sensor device comprises a quartz material layer surface; arranged along a first axis, a first interdigitated transducer disposed over the planar surface of the quartz material layer, a first reflection structure disposed over the planar surface of the quartz material layer, and a second reflection structure disposed over the planar surface of the quartz material layer; and arranged along a second axis, a second interdigitated transducer disposed over the planar surface of the quartz material layer, a third reflection structure disposed over the planar surface of the quartz material layer, and a fourth reflection structure disposed over the planar surface of the quartz material layer; and wherein the first axis and the second axis are inclined to each other by a finite angle.

Two-port acoustic wave sensor device

An acoustic wave sensor device, comprising an interdigitated transducer; a first reflection structure arranged on one side of the interdigitated transducer, and a second reflection structure arranged on another side of the interdigitated transducer; a first resonance cavity comprising a first upper surface and formed between the interdigitated transducer and the first reflection structure; a second resonance cavity comprising a second upper surface and formed between the interdigitated transducer and the second reflection structure; and wherein the second upper surface comprises a physical and/or chemical modification as compared to the first upper surface.

Differential acoustic wave sensors

A coupled cavity filter structure that uses a surface acoustic wave, in particular, a guided surface acoustic wave, comprises an acoustic wave propagating substrate, at least one input transducer structure and one output transducer structure, provided over the substrate, each comprising inter-digitated comb electrodes, at least one reflecting structure comprising at least one or more metallic strips positioned at a distance and in between the input and output transducer structures, in the direction of propagation of an acoustic wave. The acoustic wave propagating substrate is a composite substrate comprising a base substrate and a piezoelectric layer. In additional embodiments, a coupled cavity filter structure comprises a groove. In additional embodiments, a SAW ladder filter device comprises at least two coupled cavity filter structures as described herein, wherein the at least two coupled cavity filter structures are positioned on a single line.

Resonant cavity surface acoustic wave (SAW) filters

A surface acoustic wave tag device is disclosed, comprising: an acoustic wave propagating substrate, at least one transducer structure comprising inter-digitated comb electrodes, and at least one reflecting means, the reflecting means comprising at least one reflector, wherein the acoustic wave propagation substrate is a composite substrate comprising a base substrate and a piezoelectric layer, wherein the crystallographic orientation of the piezoelectric layer with respect to the base substrate is such that the propagation of a shear wave inside the piezoelectric layer and in the direction of propagation corresponding to the acoustic wave is enabled. A physical quantity determining device and a fabrication method of such surface acoustic wave tag device are also disclosed.

Composite substrates for saw tags or RFID and sensors applications

A surface acoustic wave device comprising a base substrate, a piezoelectric layer and an electrode layer in between the piezoelectric layer and the base substrate, a comb electrode formed on the piezoelectric layer comprising a plurality of electrode means with a pitch p, defined asp=A, with A being the wavelength of the standing acoustic wave generated by applying opposite potentials to the electrode layer and comb electrode, wherein the piezoelectric layer comprises at least one region located in between the electrode means, in which at least one physical parameter is different compared to the region underneath the electrode means or fingers. A method of fabrication for such surface acoustic wave device is also disclosed. The physical parameter may be thickness, elasticity, doping concentration of Ti or number of protons obtained by proton exchange.

Surface acoustic wave device on composite substrate

A surface elastic wave filter has resonant cavities and comprises a composite substrate formed of a base substrate and a piezoelectric upper layer; at least one input electroacoustic transducer and an output electroacoustic transducer, arranged on the upper layer, and at least one internal reflecting structure, arranged between the input electroacoustic transducer and the output electroacoustic transducer. The internal reflecting structure comprises a first structure comprising at least one reflection grating having a first period and a second structure comprising at least one reflection grating having a second period, the first period being greater than the second period.

Surface elastic wave filter with resonant cavities

A method of interrogating an acoustic wave sensor comprises transmitting, by an interrogator, an interrogation radiofrequency signal to the acoustic wave sensor by way of a transmission antenna, receiving, by the interrogator, a response radiofrequency signal from the acoustic wave sensor by way of a reception antenna, and processing by a processing means of the interrogator the received response radiofrequency signal to obtain in-phase and quadrature components both in the time domain and the frequency domain, determining by the processing means perturbations of the obtained in-phase and quadrature components both in the time domain and the frequency domain and determining by the processing means a value of a measurand based on the detected perturbations.

Acoustic wave sensor and interrogation of the same

A resonator device for measuring stress comprises at least two resonators, each resonator comprising an inter-digitated transducer structure arranged between two reflecting structures on or in a piezoelectric substrate, characterized in that the at least two resonators are arranged and positioned such that they have two different wave propagation directions, and each resonator comprises at least two parts with the area between the two parts of the at least two resonators forming a cavity, wherein the cavity is shared by the at least two resonators. A differential sensing device may comprise at least one resonator device as described wherein.

Resonator device for measuring stress including at least two resonators with shared cavity

Surface acoustic wave device on device on composite substrate

Growing community of inventors

Besançon, France

Sylvain Ballandras