Vanguard International Semiconductor Corporation

Syed-Sarwar Imam

Chia-Hao Lee

Chih-Cherng Liao

Chih-Hung Lin

Hung-Wei Wang

Kun-Han Lin

A semiconductor device, which comprises a semiconductor substrate, an epitaxial layer, first metal structures, first doped regions, second metal structures, second doped regions, a conductive layer and a Schottky layer. The epitaxial layer is disposed on the semiconductor substrate. The first metal structures are disposed in the epitaxial layer. The first metal structures extend along a first direction and have a first width in a second direction. The first doped regions are disposed in the epitaxial layer and extend from below each first metal structure to the sidewall of each first metal structure. The second metal structure is disposed in the epitaxial layer. The second metal structures extend along the first direction and have a second width in the second direction, wherein the first width is larger than the second width. The conductive layer is disposed under the semiconductor substrate, and the Schottky layer is disposed on the epitaxial layer.

Semiconductor device

A semiconductor device includes an epitaxial layer, at least one gate trench, and at least one trench gate structure. The gate trench includes a lower gate trench and an upper gate trench, and a width of the lower gate trench is less than a width of the upper gate trench. The trench gate structure is disposed in the gate trench, and the trench gate structure includes a bottom gate structure, a middle gate structure, and a top gate structure. The thickness of the second gate dielectric layer of the middle gate structure is less than the thickness of the first gate dielectric layer of the bottom gate structure. The thickness of the third gate dielectric layer of the top gate structure is less than the thickness of the second gate dielectric layer of the middle gate structure. The first, second, and third gate electrodes are separated from each other.

Semiconductor device and method of fabricating the same

A semiconductor device includes a substrate, a gate dielectric layer, a gate electrode, a field plate, a source electrode and a drain electrode. The gate dielectric layer is disposed on the substrate and includes a first portion having a first thickness, a second portion having a second thickness, and a third portion having a third thickness. The first, second and third thicknesses are different from each other, and the first thickness is smaller than the second and third thicknesses. The gate electrode is disposed on the first portion of the gate dielectric layer. The field plate is separated from and electrically coupled to the gate electrode, and is disposed on the second and third portions of the gate dielectric layer. The source and drain electrodes are disposed on the sides of the gate electrode and the field plate, respectively.

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Darbhnga, Bihar, India

Syed-Sarwar Imam