Johns Hopkins University

University of Nebraska

Sy-Hwang Liou

Chia-Ling Chien

Bernard Doudin

Cheol-Soo Yang

Andrei Sokolov

Lu Yuan

Gang Xiao

Disclosed are two terminal bistable memory cells having least two high-spin polarization magnetic material junctions which are separated from one another by electron trap site defect containing insulator. The two terminal bistable memory cells demonstrate stable, low current readable, hysteretic resistance states which are set by the flow of a relatively high, (eg. a milliamp or less), plus or minus polarity D.C. current therethrough, which resistance is monitored by lower magnitude A.C. or D.C. current flow therethrough. Preferred cells have at least one CrO /Cr O /CrO sequence but typically have multiple CrO /Cr O /CrO sequences in series.

Application of high spin polarization materials in two terminal non-volatile bistable memory devices

Improved cermets having superior properties comprising a ferromagnetic metal and an insulator. By controlling process conditions, cermets having high magnetization and high coercivity as well as chemical stability, wear resistance and corrosion resistance are prepared. The cermets of this invention find particular utility as high density recording media.

Metal-insulator composites having improved properties and method for

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Lincoln, NE, United States of America

Sy-Hwang Liou