International Business Machines Corporation

Swetha Kamlapurkar

Tymon Barwicz

Jason Scott Orcutt

Abram L Falk

Chi Xiong

Steven M Shank

Marwan H Khater

Solomon Assefa

Yurii A Vlasov

Robert L Bruce

Stephen McConnell Gates

Hanhee Paik

Ricardo Alves Donaton

Techniques regarding quantum transducers are provided. For example, one or more embodiments described herein can include an apparatus that can comprise a superconducting microwave resonator having a microstrip architecture that can include a dielectric substrate positioned between a superconducting waveguide and a superconducting ground plane. The superconducting waveguide can have a first material composition. Also, the superconducting ground plane can have a second material composition that is distinct from the first material composition. Further, an optical resonator can be arranged with the dielectric substrate.

Dual-superconductor quantum transducer

Techniques regarding quantum transducers are provided. For example, one or more embodiments described herein can include an apparatus that can include a superconducting microwave resonator having a microstrip architecture that includes a dielectric layer positioned between a superconducting waveguide and a ground plane. The apparatus can also include an optical resonator positioned within the dielectric layer.

Quantum transducers with embedded optical resonators

Techniques regarding microwave-to-optical quantum transducers are provided. For example, one or more embodiments described herein can include an apparatus that can include a microwave resonator on a dielectric substrate and adjacent to an optical resonator, and a photon barrier structure at least partially surrounding an optical resonator, wherein the photon barrier structure is configured to provide isolation of the microwave resonator from optical photons in the dielectric substrate outside the photon barrier structure.

Microwave-to-optical quantum transducers

A method of forming an integrated photonic semiconductor structure having a photonic device and a CMOS device may include depositing a first silicon nitride layer having a first stress property over the photonic device, depositing an oxide layer having a stress property over the deposited first silicon nitride layer, and depositing a second silicon nitride layer having a second stress property over the oxide layer. The deposited first silicon nitride layer, the oxide layer, and the second silicon nitride layer encapsulate the photonic device.

Stress engineered multi-layers for integration of CMOS and Si nanophotonics

A method for far back end of the line (FBEOL) protection of a semiconductor device includes forming a patterned layer over a back end of the line (BEOL) stack, depositing a first conformal protection layer on the patterned layer which covers horizontal surfaces of a top surface and sidewalls of openings formed in the patterned layer. A resist layer is patterned over the first conformal protection layer such that openings in the resist layer correspond with the openings in the patterned layer. The first conformal protection layer is etched through the openings in the resist layer to form extended openings that reach a stop position. The resist layer is removed, and a second conformal protection layer is formed on the first conformal protection layer and on sidewalls of the extended openings to form an encapsulation boundary to protect at least the patterned layer and a portion of the BEOL stack.

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Ossining, NY, United States of America

Swetha Kamlapurkar