Mixed-Signal Devices Inc.

Sweta Agarwal

Shouri Chatterjee

Srikar Bhagavatula

Rakesh Kumar Palani

Low temperature coefficient capacitors are described. In an embodiment, a capacitor includes several metal-oxide-semiconductor (MOS) transistors, where each of the several MOS transistors includes a gate, a source and a drain terminal, and where the source and drain terminals of each of the several MOS transistors are connected; several switches, where each of the switches includes two terminals; where first terminals of each of the switches from the several switches are connected together; and where a second terminal of each of the switches from the several switches is connected to a gate terminal of each of the several MOS transistors.

Systems and methods for low temperature coefficient capacitors

Systems and methods for frequency reference generation are described. In an embodiment, a frequency reference circuit, includes: a bandgap proportional to temperature (PTAT) generator circuit that generates a bandgap PTAT current; a resistor complementary to temperature (CTAT) generator circuit that generates a resistor CTAT current; an adder that adds the PTAT current and the CTAT current to generate a constant current I; a switched-resistor (switched-R) circuit that receives the constant current Iand a previously generated output clock and generates an output; a bandgap voltage reference generator circuit that generates a bandgap voltage V; an integrator circuit that receives the output of the switched-R circuit and the bandgap voltage Vand generates an output; and a voltage-controlled oscillator (VCO) circuit that receives the output of the integrator circuit and generates a frequency reference.

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New Delhi, India

Sweta Agarwal