Hannstar Display Corporation

Nan Ya Technology Corporation

Sweehan J H Yang

Po-Sheng Shih

Po-Yang Chen

Shih-Fan Kuan

Kuo-Chien Wu

Hsien-Tang Hu

Chian-Chih Hsiao

Chen-Chou Huang

Po Sheng Shih

Hung-Chang Chang

Chao Hui Wu

Po Yang Chen

Zhao-Hui Wu

Ting-Chung Liu

A method for manufacturing a transflective liquid crystal display panel includes providing an array substrate having a plurality of pixel regions, each of the pixel regions includes a device region, a transmission region and a reflection region defined therein; forming a first metal layer on the array substrate; patterning the first metal layer to simultaneously form a gate electrode in the device region and a plurality of metal bumps in the reflection region; forming a first insulating layer having a rough surface and covering the gate electrode and the metal bumps on the array substrate; forming a patterned semiconductor layer on the gate electrode; forming a reflective layer covering the first insulating layer and having a rough surface in the reflection region; and sequentially forming a patterned second insulating layer and a transparent pixel electrode on the array substrate.

Transflective liquid crystal display panel and manufacturing method thereof

A transflective liquid crystal display (TR LCD) including a display panel, a first reference voltage line and a second reference voltage line is disclosed. The display panel includes: a plurality of scan lines; a plurality of data lines, disposed substantially perpendicularly to the scan lines; a plurality of pixels arranged in an array, respectively coupled to a corresponding data line and a corresponding scan line. Each pixel has a transparent area and a reflection area, and each row of pixels is divided by definition into a first pixel-group and a second pixel-group. The above-mentioned first reference voltage line and second reference voltage line are respectively coupled to the reflection areas of the pixels of the first pixel-group and the second pixel-group of each row of pixels for respectively receiving a first reference voltage signal and a second reference voltage signal, wherein both the reference voltage signals are time-varying or periodic.

Transflective liquid crystal display

The present invention discloses a liquid crystal display containing a plurality of liquid crystals, a switching element, a plurality of alignment layers and a plurality of electrodes. The switching element comprises a gate, a drain and a source, and the drain/source forms a directional top portion. The gate and the source/drain form a lateral electric field. The alignment layer is disposed on the switching element and corresponds with the directional top portion. The plurality of liquid crystals are operated by the lateral electric field and located above the electrodes and the alignment layers. The alignment direction of plurality liquid crystals is following the directional top portion due to the enhancement of liquid crystal phase transition. Enhancement of the lateral electric field between the plurality of electrodes is helpful to reduce liquid crystal phase transition time.

Pixel structure, liquid crystal display and operation method thereof

A driving method for activating an optical self-compensated birefringence mode liquid crystal device is provided. The optical self-compensated birefringence mode liquid crystal device has plural pixel structures, plural substrates and a liquid crystal layer sandwiched between the plural substrates. Each of said plural pixel structures comprises a first electrode, a second electrode, a pixel electrode and a common electrode. The driving method comprising steps of: providing a space between said first electrode and said second electrode on one of plural substrate; providing a first potential difference between said first electrode and said second electrode to generate a first electric field; and performing an initialization process from a bend of said second electrode to transitioning an alignment state of said liquid crystal layer from a non-display alignment state to a display alignment state by said first electric field. Further, generate a second electric field by a second potential difference between said pixel electrode and said common electrode.

Pixel structure of liquid crystal device and driving method thereof

A method for activating a state transition of a liquid crystal in a liquid crystal display is provided. The liquid crystal display has a first substrate, a second substrate and plural pixel structures, wherein the liquid crystal is sandwiched between the first substrate and the second substrate and each of the plural pixel structures has a transistor having a first electrode and a second electrode. The method including steps of: providing a first potential difference between the first electrode and the second electrode to generate a first electric field; providing a second potential difference between the first substrate and the second substrate to generate a second electric field; and transitioning the liquid crystal from a non-display alignment state to a display alignment state by the first and the second electric fields.

Pixel structure of liquid crystal display comprising V-shaped drain and source electrodes and method for activating a state transition of a liquid crystal layer

A method of fabricating a semiconductor device. A stack gate structure having a cap layer thereon and a first dielectric layer having a top surface that exposes the cap layer are formed on a substrate. A buffer layer is formed to cover the dielectric layer and the cap layers in a first region of the substrate. A portion of the cap layers in a second region of the substrate are removed so that the cap layers have a thickness smaller than or equal to the buffer layer. A second dielectric layer is formed over the substrate. A portion of the second dielectric layer and the underlying the buffer layer and the first dielectric layer are etched to form a bit line contact opening. In the meantime, a portion of the second dielectric layer and the underlying cap layer are etched to form a gate contact opening.

Method of fabricating semiconductor device

A method of forming a single sided conductor and a semiconductor device having the same is provided. The method includes providing a substrate having an opening. The opening exposes a sidewall and an opening base surface. A single sided silicon layer adjacent to the sidewall in the opening. The single sided silicon layer exposes a portion of the opening base surface. The single sided silicon layer is implanted with fluorine-containing ions. The substrate and the single sided silicon layer is thermally oxidized to form a thermal oxide layer in the opening.

Growing community of inventors

Tainan, Taiwan

Sweehan J H Yang