Nanyang Technological University

Lightlab Sweden Ab

Swee Tiam Tan

Hilmi Volkan Demir

Xiaowei Sun

Zi-Hui Zhang

Wei Liu

Jonas Tirén

Vijay Kumar Sharma

Yun Ji

Xueliang Zhang

Patrik Hollman

Zhen Gang Ju

Zhengang Ju

Yongbiao Zhao

Xiao Wei Sun

The present disclosure generally relates to field emission cathode structure for a field emission arrangement, specifically adapted for enhance reliability and prolong the lifetime of the field emission arrangement by arranging a getter element underneath a gas permeable portion of the field emission cathode structure. The present disclosure also relates to a field emission lighting arrangement comprising such a field emission cathode structure and to a field emission lighting system.

Field emission cathode structure for a field emission arrangement

The present invention generally relates to a method for operating a plurality of field emission light sources, specifically for performing a testing procedure in relation to a plurality of field emission light sources manufactured in a chip based fashion. The invention also relates to a corresponding testing system.

Chip testing method and an apparatus for testing of a plurality of field emission light sources

According to one embodiment, an organic light emitting device is described including a first light emitting unit, a second light emitting unit and a charge generation layer wherein the second light emitting unit is stacked over the first light emitting unit and is connected to the first light emitting unit by means of the charge generation layer and wherein the charge generation layer includes an electron transport layer, a transition metal oxide layer arranged over the electron transport layer and a diffusion suppressing layer arranged between the electron transport layer and the transition metal oxide layer to separate the electron transport layer from the transition metal oxide layer.

Organic light emitting device

A light-emitting device may include an active layer. The light-emitting device may include a first semiconductor layer of a first conductivity type. The first semiconductor layer may be in physical contact with the active layer. The light-emitting device may also include a second semiconductor layer of a second conductivity type. The second semiconductor layer may be in physical contact with the active layer and opposite the first conductive layer. The light-emitting device may further include a first electrode in physical contact with a first side of the first semiconductor layer. The light-emitting device may additionally include a second electrode in physical contact with a second side of the first semiconductor layer. The second side of the first semiconductor layer may be different from the first side of the first semiconductor layer. The light-emitting device may also include a third electrode in physical contact with the second semiconductor layer.

Light-emitting device and method of forming the same

Vertical high power LEDs are the technological choice for the application of general lighting due to their advantages of high efficiency and capability of handling high power. However, the technologies of vertical LED fabrication reported so far involve the wafer-level metal substrate substitution which may cause large stress due to the mismatch between metal substrate and LED layer. Moreover, the metal substrate has to be diced to separate LED dies which may cause metal contamination and thus increase the leakage current. These factors will lower the yield of LED production and increase the cost as well. The present invention is to disclose a novel method for the fabrication of GaN vertical high power LEDs and/or a novel method for the fabrication of GaN vertical high power LEDs which is compatible to mass production conditions. The novelty of the invention is that the island metal plating is conducted with the help of pattern formation techniques. Due to the small area of the islands, the stress generated between LED layer and metal islands is much less significant. Furthermore, due to the island metal plating and through the application of temporary supporting carriers the LED dies will be separated at the end of the fabrication process automatically or simply by applying slight mechanical stress or stretching the adhesive tape. This advantage avoids the metal dicing step and reduces the possibility of metal contamination and leakage current generation. Therefore, high yield and low cost will be realized using this novel method in LED production.

Method of fabricating semiconductor devices

A light emitting device comprising a plurality of current spreading layers including a first P doped layer, a first N doped layer and a second P doped layer, wherein the N doped layer having a doping level and thickness configured for substantial depletion or full depletion.

Growing community of inventors

Singapore, Singapore

Swee Tiam Tan