Infineon Technologies Ag

Infineon Technologies Austria Ag

Swee Kah Lee

Chau Fatt Chiang

Kok Yau Chua

Soon Lock Goh

Chee Yang Ng

Mei Chin Ng

Sook Woon Chan

Joachim Mahler

Chee Hong Lee

Muhammad Muhammat Sanusi

Chan Lam Cha

Fong Mei Lum

Valentyn Solomko

Thomas Stoek

Josef Maerz

Chee Voon Tan

Khay Chwan Saw

Beng Keh See

Paul Armand Asentista Calo

Jagen Krishnan

Hock Heng Chong

Yik Yee Tan

Chee Hong Fang

Chew Theng Tai

Guan Choon Matthew Nelson Tee

Aileen Manantan Soriano

Peh Hean Teh

Poh Cheng Lim

Thorsten Meyer

Horst Theuss

Josef Hoeglauer

Klaus Schiess

Manfred Mengel

Thorsten Scharf

Evelyn Napetschnig

Chii Shang Hong

Stefan Macheiner

Theng Chao Long

Wolfgang Hetzel

Holger Torwesten

Matthias Steiert

Jayaganasan Narayanasamy

Norliza Morban

Stefan Martens

Wern Ken Daryl Wee

Nurfarena Othman

Khay Chwan Andrew Saw

Pei Luan Pok

Roslie Saini Bin Bakar

Hock Siang Chua

Yean Seng Ng

Choon Huey Wang

Norbert Pielmeier

Chin Yung Lai

Siew Ching Seah

Jo Ean Chye

Kian Hong Yeo

Stefan Schmid

Chin Wei Ronnie Tan

Yu Shien Leong

Jan Sing Loh

A method of manufacturing an electronic module assembly includes forming the electronic module assembly, wherein the electronic module assembly comprises a plurality of internal exposed surfaces, a plurality of external exposed surfaces, at least one internal cavity, and an internal heat source configured to generate heat internally within the electronic module assembly; dipping the electronic module assembly into a thermally conductive material to coat the plurality of internal exposed surfaces and the plurality of external exposed surfaces and to at least partially fill the at least one internal cavity; and curing the thermally conductive material formed on the plurality of internal exposed surfaces and the plurality of external exposed surfaces and filled within the at least one internal cavity to form a thermally conductive layer, wherein the thermally conductive layer is formed as a one-piece integral member.

Dipped coated electronic module assembly with enhanced thermal distribution

In an embodiment, a leadframe includes a first electrically conductive part and a second electrically conductive part, each having an outer surface arranged to provide substantially coplanar outer contact areas having a footprint and an inner surface opposing the outer surface, the first part being spaced apart from the second part by a gap, a first recess arranged in the inner surface of the first part, a second recess arranged in the inner surface of the second part, and a first electrically conductive insert that is arranged in, and extends between, the first recess and the second recess and bridges the gap between the first part and the second part.

Leadframe, semiconductor package and method

A method of forming a semiconductor package includes providing a metal baseplate having a base section and a plurality of metal posts, the base section being a planar pad of substantially uniform thickness, the plurality of metal posts each extending up from a planar upper surface of the base section, mounting a semiconductor die on the upper surface of the metal baseplate, forming an encapsulant body of electrically insulating mold compound on the upper surface of the base section, electrically connecting terminals of the semiconductor die to the metal posts, and removing the base section so as to form package contacts from the metal posts at a first surface of the encapsulant body.

Semiconductor package with metal posts from structured leadframe

A method for fabricating an electronic device includes providing an encapsulant having an encapsulation material, providing a first laser beam and forming a trench into a main surface of the encapsulant by removing the encapsulation material by means of the first laser beam, forming a mask along a portion above the edge of the trench, and providing a second laser beam and sweeping the second laser beam over a surface area of the main surface of the encapsulant, wherein the surface area covers at least an area spatially confined by the trench.

Dual step laser processing of an encapsulant of a semiconductor chip package

A method for fabricating a semiconductor device with a heterogeneous solder joint includes: providing a semiconductor die; providing a coupled element; and soldering the semiconductor die to the coupled element with a first solder joint. The first solder joint includes: a solder material including a first metal composition; and a coating including a second metal composition, different from the first metal composition, the coating at least partially covering the solder material. The second metal composition has a greater stiffness and/or a higher melting point than the first metal composition.

Semiconductor device with a heterogeneous solder joint and method for fabricating the same

A semiconductor package includes: a lead frame having a plurality of blocks of uniform size and laterally spaced apart from one another with uniform spacing; a first semiconductor die attached to a first group of the blocks; electrical conductors connecting a plurality of input/output (I/O) terminals of the first semiconductor die to a second group of the blocks, at least some blocks of the second group being laterally spaced outward from the blocks of the first group; and a mold compound encapsulating the first semiconductor die and the electrical conductors. Corresponding methods of producing the semiconductor package are also described.

Lead frame-based semiconductor package

A method of producing a molded semiconductor package includes: attaching a first load terminal at a first side of a semiconductor die to a leadframe, the semiconductor die having a second load terminal at a second side opposite the first side and a control terminal at the first side or the second side; encapsulating the semiconductor die in a laser-activatable mold compound so that the leadframe is at least partly exposed from the laser-activatable mold compound at a first side of the molded semiconductor package, and the second load terminal is at least partly exposed from the laser-activatable mold compound at a second side of the molded semiconductor package opposite the first side; and laser activating a first region of the laser-activatable mold compound to form a first laser-activated region that is electrically conductive.

Double-sided cooled molded semiconductor package

Embodiments of molded packages and corresponding methods of manufacture are provided. In an embodiment of a molded package, the molded package includes a laser-activatable mold compound having a plurality of laser-activated regions which are plated with an electrically conductive material to form metal pads and/or metal traces at a first side of the laser-activatable mold compound. A semiconductor die embedded in the laser-activatable mold compound has a plurality of die pads. An interconnect electrically connects the plurality of die pads of the semiconductor die to the metal pads and/or metal traces at the first side of the laser-activatable mold compound.

Semiconductor package having a laser-activatable mold compound

A pressure sensor includes a lidless structure defining an internal chamber for a sealed environment and presenting an aperture; a chip including a membrane deformable on the basis of external pressure, the chip being mounted outside the lidless structure in correspondence to the aperture so that the membrane closes the sealed environment; and a circuitry configured to provide a pressure measurement information based on the deformation of the membrane.

Pressure sensor having a lidless/laminate structure

An embodiment device includes a body structure having an interior cavity, a control chip disposed on a first interior surface of the interior cavity, and a sensor attached, at a first side, to a second interior surface of the interior cavity opposite the first interior surface. The sensor has a mounting pad on a second side of the sensor that faces the first interior surface, and the sensor is vertically spaced apart from the control chip by an air gap, with the sensor is aligned at least partially over the control chip. The device further includes an interconnect having a first end mounted on the mounting pad, the interconnect extending through the interior cavity toward the first interior surface, and the control chip is in electrical communication with the sensor by way of the interconnect.

Over-under sensor packaging with sensor spaced apart from control chip

A method of manufacturing a package, comprising embedding the semiconductor chip with an encapsulant comprising a transition metal in a concentration in a range between 10 ppm and 10,000 ppm; selectively converting of a part of the transition metal, such that the electrical conductivity of the encapsulant increases; and plating the converted part of the encapsulant with an electrically conductive material.

Manufacturing a package using plateable encapsulant

A semiconductor package includes a plurality of metal leads and a semiconductor die attached to the plurality of metal leads by an interconnect. A surface of the plurality of metal leads, a metallized surface of the semiconductor die, and/or a surface of the interconnect comprises Cu and has a thermal conductivity in a range of 340 to 400 W/mK and an electrical conductivity in a range of 80 to 110% IACS. One or more of the surfaces which comprise Cu and have a thermal conductivity in the range of 340 to 400 W/mK and an electrical conductivity in the range of 80 to 110% IACS also includes micropores having a diameter in a range of 1 &#x3bc;m to 10 &#x3bc;m. A method of manufacturing a metal surface with such micropores also is described.

Porous Cu on Cu surface for semiconductor packages

A method of producing a molded semiconductor package includes: attaching a first load terminal at a first side of a semiconductor die to a leadframe, the semiconductor die having a second load terminal at a second side opposite the first side and a control terminal at the first side or the second side; encapsulating the semiconductor die in a laser-activatable mold compound so that the leadframe is at least partly exposed from the laser-activatable mold compound at a first side of the molded semiconductor package, and the second load terminal is at least partly exposed from the laser-activatable mold compound at a second side of the molded semiconductor package opposite the first side; and laser activating a first region of the laser-activatable mold compound to form a first laser-activated region which forms part of an electrical connection to the second load terminal.

Molded semiconductor package with double-sided cooling

A molded semiconductor package includes a mold compound having opposing first and second main surfaces and an edge extending between the first and second main surfaces. A semiconductor die is embedded in the mold compound. A plurality of metal pads embedded in the mold compound are electrically connected to the semiconductor die. The metal pads have a bottom face which is uncovered by the mold compound at the second main surface of the mold compound. The metal pads disposed around a periphery of the molded package have a side face which is uncovered by the mold compound at the edge of the mold compound. The faces of the metal pads uncovered by the mold compound are plated. The side face of each metal pad disposed around the periphery of the molded package is recessed inward from the edge of the mold compound. A corresponding manufacturing method is also described.

Molded semiconductor package having an optical inspection feature

Growing community of inventors

Melaka, Malaysia

Swee Kah Lee