Applied Materials, Inc.

Swayambhu Prasad Behera

Bok Hoen Kim

Wei Liu

Theresa Kramer Guarini

Kin Pong Lo

Malcolm J Bevan

Vladimir Nagorny

Bernard Lloyd Hwang

Jacob Abraham

Juan Carlos Rocha-Alvarez

Ganesh Balasubramanian

Deenesh Padhi

Pramit Manna

Kwangduk Douglas Lee

Prashant Kumar Kulshreshtha

Derek R Witty

Zheng John Ye

Patrick Reilly

Mandar Balasaheb Pandit

Heung Lak Park

Shahid Shaikh

Tersem Summan

Hiroji Hanawa

Jianhua Zhou

Jay D Pinson, Ii

Hari K Ponnekanti

Mukund Srinivasan

Ren-Guan Duan

Jian J Chen

Xing Lin

Sungwon Ha

Jason K Foster

Uwe Paul Haller

Embodiments of the present disclosure generally relate to the fabrication of integrated circuits and to apparatus for use within a substrate processing chamber to improve film thickness uniformity. More specifically, the embodiments of the disclosure relate to an edge ring. The edge ring may include an overhang ring.

Film thickness uniformity improvement using edge ring and bias electrode geometry

Edge ring

Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1&#xd7;10ohm-cm to about 1&#xd7;10ohm-cm in a temperature of about 250&#xb0; C. to about 700&#xb0; C., and an electrode embedded in the body, the electrode is coupled to a power supply. In one example, the chuck body is composed of an aluminum nitride material which has been observed to be able to optimize chucking performance around 600&#xb0; C. or above during a deposition or etch process, or any other process that employ both high operating temperature and substrate clamping features.

Method and apparatus of processing wafers with compressive or tensile stress at elevated temperatures in a plasma enhanced chemical vapor deposition system

Techniques are disclosed for methods and apparatuses for increasing the breakdown voltage while substantially reducing the voltage leakage of an electrostatic chuck at temperatures exceeding about 300 degrees Celsius in a processing chamber.

High temperature electrostatic chucking with dielectric constant engineered in-situ charge trap materials

Embodiments of the disclosure relate to deposition of a conformal carbon-based material. In one embodiment, the method comprises depositing a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, introducing a hydrocarbon source, a plasma-initiating gas, and a dilution gas into the processing chamber, generating a plasma in the processing chamber at a deposition temperature of about 80&#xb0; C. to about 550&#xb0; C. to deposit a conformal amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers, and removing the patterned features formed from the sacrificial dielectric layer.

Ultra-conformal carbon film deposition

Embodiments of the invention relate to deposition of a conformal carbon-based material. In one embodiment, the method comprises depositing a sacrificial dielectric layer with a predetermined thickness over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, introducing a hydrocarbon source, a plasma-initiating gas, and a dilution gas into the processing chamber, wherein a volumetric flow rate of hydrocarbon source:plasma-initiating gas:dilution gas is in a ratio of 1:0.5:20, generating a plasma at a deposition temperature of about 300 C to about 500 C to deposit a conformal amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate, and removing the patterned features.

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Santa Clara, CA, United States of America

Swayambhu Prasad Behera