Western Digital Technologies, Inc.

Swaroop Kaza

Sainath Viswasarai

Gopu S

Piyush Anil Dhotre

Chittoor Devarajan Sunilkumar

Divya Prasad

Narayan Kuddannavar

A non-volatile storage system comprises non-volatile memory cells arranged in physical blocks, and one or more control circuits in communication with the non-volatile memory cells. The one or more control circuits are configured to write data to a physical block of the non-volatile memory cells with a scheme to reduce read disturb if a logical block associated with the physical block has a read intensity greater than a threshold.

Scheme to reduce read disturb for high read intensive blocks in non-volatile memory

Apparatuses, systems, methods, and computer program products for enhanced erase retry of a non-volatile storage device are disclosed. An apparatus includes a non-volatile storage device and a controller. A controller includes a verification component configured to detect that an erase operation performed on an erase block of a non-volatile storage device is unsuccessful. A controller includes a parameter component configured to adjust one or more erase parameters for an erase operation. One or more erase parameters may be associated with one or more select gate drain storage cells of an erase block. A controller includes an erase component configured to retry an erase operation on an erase block with one or more adjusted erase parameters.

Enhanced erase retry of non-volatile storage device

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Milpitas, CA, United States of America

Swaroop Kaza