Qualcomm Incorporated

Swarna Navubothu

Xiaohua Kong

Nam Dang

Cheng Zhong

Alan G Lewis

Martin Saint-Laurent

Rajeev Jain

Paras Gupta

Tung Nang Pham

Joseph Terregrossa

Somasekhar Maradani

Aspects of the disclosure are directed to voltage-based current sensing. In accordance with one aspect, voltage-based current sensing may include performing a coarse calibration of a voltage based current sensor to determine a coarse offset; performing a fine calibration of the voltage based current sensor to determine a fine offset; performing a frequency calibration of the voltage based current sensor to determine a frequency offset; and performing a transfer function calibration of the voltage based current sensor to determine a sensor transfer function using one or more of the coarse offset, the fine offset and the frequency offset; and measuring a load current using the sensor transfer function.

Differential current sensing with robust path, voltage offset removal and process, voltage, temperature (PVT) tolerance

A clock generator is provided that is immune to skew between bits in digital words generated by a multi-phase receiver.

Clock pulse generator for multi-phase signaling

A method includes tracking a tuning voltage at a first circuit coupled to a first drain node of a first supply of a charge pump. The method also includes tracking the tuning voltage at a second circuit coupled to a second drain node of a second supply of the charge pump. The method further includes stabilizing a first voltage of the first drain node and a second voltage of the second drain node responsive to the tuning voltage.

System and method of stabilizing charge pump node voltage levels

A circuit includes a first path including a first transistor and a first current source. The first transistor is responsive to a tuning voltage. The circuit also includes a tuning voltage range extension circuit responsive to the tuning voltage. The tuning voltage range extension circuit is configured to selectively change current supplied by the first path as the tuning voltage exceeds a capacity threshold of the first transistor.

Tuning voltage range extension circuit and method

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San Diego, CA, United States of America

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